Photocurrent spectroscopy applied to thin film solar cells based on hydrogenated amorphous silicon (a-Si:H)

• Autores: Valera Palacios, Aníbal, Valentin Siu, Marco
• Formato: artículo
• Fecha de Publicación: 2005
• Institución: Universidad Nacional de Ingeniería
• Repositorio: Revistas - Universidad Nacional de Ingeniería
• Lenguaje: español
• OAI Identifier: oai:oai:revistas.uni.edu.pe:article/419
• Enlace del recurso: https://revistas.uni.edu.pe/index.php/tecnia/article/view/419
• Nivel de acceso: acceso abierto
• Materia: películas delgadas; silico amorfo; mediciones de fotocorriente; células solares; thin films; amorphous silicon; photocurrent measurements; solar cells

Using photocurrent spectroscopy, we report measurements of the photo responde below the optical gap in hydrogenated amorphous silicon (a-Si:H). The a-Si:H films were grown in a non conventional DC plasma assited discharge chamber. The measurements suggest that the density of states of this material is not very different than conventional intrinsic a-Si:H (device-quality) and not so extended as usually taken. The positions of the corresponding photovoltaic transition energies are determined and agree very well with known data obtained by other methods.