Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide

• Autores: Guerra J.A., Montañez L.M., Tucto K., Angulo J., Töfflinger J.A., Winnaker A., Weingärtner R.
• Formato: artículo
• Fecha de Publicación: 2016
• Institución: Consejo Nacional de Ciencia Tecnología e Innovación
• Repositorio: CONCYTEC-Institucional
• Lenguaje: inglés
• OAI Identifier: oai:repositorio.concytec.gob.pe:20.500.12390/644
• Enlace del recurso: https://hdl.handle.net/20.500.12390/644; https://doi.org/10.1557/adv.2016.422
• Nivel de acceso: acceso abierto
• Materia: Thin films; Absorption spectroscopy; Amorphous films; Amorphous materials; Energy gap; Hydrogenation; Optical properties; Silicon; Silicon carbide; Band gap energy; Band gap engineering; Deposition process; General equations; Hydrogen dilution; Hydrogenated silicon carbide; Post deposition annealing; Simple modeling; Amorphous silicon; https://purl.org/pe-repo/ocde/ford#2.04.01

This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements.