Silicon interface passivation studied by modulated surface photovoltage spectroscopy

• Autores: Dulanto J., Sevillano-Bendezu M.A., Grieseler R., Guerra Torres, Jorge Andrés, Korte L., Dittrich T., Tofflinger J.A.
• Formato: artículo
• Fecha de Publicación: 2021
• Institución: Consejo Nacional de Ciencia Tecnología e Innovación
• Repositorio: CONCYTEC-Institucional
• Lenguaje: inglés
• OAI Identifier: oai:repositorio.concytec.gob.pe:20.500.12390/2366
• Enlace del recurso: https://hdl.handle.net/20.500.12390/2366; https://doi.org/10.1088/1742-6596/1841/1/012003
• Nivel de acceso: acceso abierto
• Materia: Surface properties; Aluminum coatings; Aluminum metallography; Aluminum nitride; Energy gap; Hydrogen; Passivation; Semiconductor materials; Silicon; Solar energy; Solar power generation; Surface defects; http://purl.org/pe-repo/ocde/ford#1.03.01

We demonstrate that the modulated surface photovoltage spectroscopy (modulated SPS) technique can be applied to investigate interface states in the bandgap, i.e. interface passivation, of crystalline silicon coated with a downshift layer such as hydrogenated aluminum nitride with embedded terbium ions by suppressing straylight with a cut-off filter. Different hydrogen contents influence the surface photovoltage spectra at photon energies below the bandgap of crystalline silicon. Modulated SPS reveals that at higher hydrogen content there is a lower signal and, thus, a lower density of surface defect states. Our experiments show that modulated SPS can become a powerful tool for characterizing defect states at interfaces which cannot be easily studied by other methods. © 2021 Published under licence by IOP Publishing Ltd.