Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering

• Autores: Tucto Salinas K.Y., Flores Escalante L.F., Guerra Torres J.A., Grieseler R., Kups T., Pezoldt J., Osvet A., Batentschuk M., Weingärtner R.
• Formato: objeto de conferencia
• Fecha de Publicación: 2017
• Institución: Consejo Nacional de Ciencia Tecnología e Innovación
• Repositorio: CONCYTEC-Institucional
• Lenguaje: inglés
• OAI Identifier: oai:repositorio.concytec.gob.pe:20.500.12390/583
• Enlace del recurso: https://hdl.handle.net/20.500.12390/583; https://doi.org/10.4028/www.scientific.net/MSF.890.299
• Nivel de acceso: acceso abierto
• Materia: X ray diffraction analysis; Aluminum; Aluminum coatings; Aluminum nitride; Annealing; Cathodoluminescence; Heat treatment; Light; Light emission; Luminescence; Luminescence of inorganic solids; Nitrides; Radio waves; Rapid thermal processing; Rare earths; Terbium; Thin films; Wide band gap semiconductors; Aluminum nitride thin films; Annealing techniques; Energy dispersive x-ray; Luminescence properties; Photo-luminescence excitation; Post annealing treatment; Post deposition annealing; Radio frequency magnetron sputtering; Magnetron sputtering; https://purl.org/pe-repo/ocde/ford#1.03.01

This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.