Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering

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This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefull...

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Detalles Bibliográficos
Autores: Tucto Salinas K.Y., Flores Escalante L.F., Guerra Torres J.A., Grieseler R., Kups T., Pezoldt J., Osvet A., Batentschuk M., Weingärtner R.
Formato: objeto de conferencia
Fecha de Publicación:2017
Institución:Consejo Nacional de Ciencia Tecnología e Innovación
Repositorio:CONCYTEC-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.concytec.gob.pe:20.500.12390/583
Enlace del recurso:https://hdl.handle.net/20.500.12390/583
https://doi.org/10.4028/www.scientific.net/MSF.890.299
Nivel de acceso:acceso abierto
Materia:X ray diffraction analysis
Aluminum
Aluminum coatings
Aluminum nitride
Annealing
Cathodoluminescence
Heat treatment
Light
Light emission
Luminescence
Luminescence of inorganic solids
Nitrides
Radio waves
Rapid thermal processing
Rare earths
Terbium
Thin films
Wide band gap semiconductors
Aluminum nitride thin films
Annealing techniques
Energy dispersive x-ray
Luminescence properties
Photo-luminescence excitation
Post annealing treatment
Post deposition annealing
Radio frequency magnetron sputtering
Magnetron sputtering
https://purl.org/pe-repo/ocde/ford#1.03.01
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oai_identifier_str oai:repositorio.concytec.gob.pe:20.500.12390/583
network_acronym_str CONC
network_name_str CONCYTEC-Institucional
repository_id_str 4689
dc.title.none.fl_str_mv Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
title Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
spellingShingle Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
Tucto Salinas K.Y.
X ray diffraction analysis
Aluminum
Aluminum coatings
Aluminum nitride
Annealing
Cathodoluminescence
Heat treatment
Light
Light emission
Luminescence
Luminescence of inorganic solids
Nitrides
Radio waves
Rapid thermal processing
Rare earths
Terbium
Thin films
Wide band gap semiconductors
Aluminum nitride thin films
Annealing techniques
Energy dispersive x-ray
Luminescence properties
Photo-luminescence excitation
Post annealing treatment
Post deposition annealing
Radio frequency magnetron sputtering
Magnetron sputtering
https://purl.org/pe-repo/ocde/ford#1.03.01
title_short Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
title_full Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
title_fullStr Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
title_full_unstemmed Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
title_sort Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
author Tucto Salinas K.Y.
author_facet Tucto Salinas K.Y.
Flores Escalante L.F.
Guerra Torres J.A.
Grieseler R.
Kups T.
Pezoldt J.
Osvet A.
Batentschuk M.
Weingärtner R.
author_role author
author2 Flores Escalante L.F.
Guerra Torres J.A.
Grieseler R.
Kups T.
Pezoldt J.
Osvet A.
Batentschuk M.
Weingärtner R.
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Tucto Salinas K.Y.
Flores Escalante L.F.
Guerra Torres J.A.
Grieseler R.
Kups T.
Pezoldt J.
Osvet A.
Batentschuk M.
Weingärtner R.
dc.subject.none.fl_str_mv X ray diffraction analysis
topic X ray diffraction analysis
Aluminum
Aluminum coatings
Aluminum nitride
Annealing
Cathodoluminescence
Heat treatment
Light
Light emission
Luminescence
Luminescence of inorganic solids
Nitrides
Radio waves
Rapid thermal processing
Rare earths
Terbium
Thin films
Wide band gap semiconductors
Aluminum nitride thin films
Annealing techniques
Energy dispersive x-ray
Luminescence properties
Photo-luminescence excitation
Post annealing treatment
Post deposition annealing
Radio frequency magnetron sputtering
Magnetron sputtering
https://purl.org/pe-repo/ocde/ford#1.03.01
dc.subject.es_PE.fl_str_mv Aluminum
Aluminum coatings
Aluminum nitride
Annealing
Cathodoluminescence
Heat treatment
Light
Light emission
Luminescence
Luminescence of inorganic solids
Nitrides
Radio waves
Rapid thermal processing
Rare earths
Terbium
Thin films
Wide band gap semiconductors
Aluminum nitride thin films
Annealing techniques
Energy dispersive x-ray
Luminescence properties
Photo-luminescence excitation
Post annealing treatment
Post deposition annealing
Radio frequency magnetron sputtering
Magnetron sputtering
dc.subject.ocde.none.fl_str_mv https://purl.org/pe-repo/ocde/ford#1.03.01
description This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.
publishDate 2017
dc.date.accessioned.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.available.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.issued.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
dc.identifier.isbn.none.fl_str_mv 9783035710281
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/20.500.12390/583
dc.identifier.doi.none.fl_str_mv https://doi.org/10.4028/www.scientific.net/MSF.890.299
dc.identifier.scopus.none.fl_str_mv 2-s2.0-85016419055
identifier_str_mv 9783035710281
2-s2.0-85016419055
url https://hdl.handle.net/20.500.12390/583
https://doi.org/10.4028/www.scientific.net/MSF.890.299
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv Materials Science Forum
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Trans Tech Publications Ltd
publisher.none.fl_str_mv Trans Tech Publications Ltd
dc.source.none.fl_str_mv reponame:CONCYTEC-Institucional
instname:Consejo Nacional de Ciencia Tecnología e Innovación
instacron:CONCYTEC
instname_str Consejo Nacional de Ciencia Tecnología e Innovación
instacron_str CONCYTEC
institution CONCYTEC
reponame_str CONCYTEC-Institucional
collection CONCYTEC-Institucional
repository.name.fl_str_mv Repositorio Institucional CONCYTEC
repository.mail.fl_str_mv repositorio@concytec.gob.pe
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spelling Publicationrp01105600rp01108600rp01109600rp01106600rp01102600rp01104600rp01107600rp01103600rp00714500Tucto Salinas K.Y.Flores Escalante L.F.Guerra Torres J.A.Grieseler R.Kups T.Pezoldt J.Osvet A.Batentschuk M.Weingärtner R.2024-05-30T23:13:38Z2024-05-30T23:13:38Z20179783035710281https://hdl.handle.net/20.500.12390/583https://doi.org/10.4028/www.scientific.net/MSF.890.2992-s2.0-85016419055This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengTrans Tech Publications LtdMaterials Science Foruminfo:eu-repo/semantics/openAccessX ray diffraction analysisAluminum-1Aluminum coatings-1Aluminum nitride-1Annealing-1Cathodoluminescence-1Heat treatment-1Light-1Light emission-1Luminescence-1Luminescence of inorganic solids-1Nitrides-1Radio waves-1Rapid thermal processing-1Rare earths-1Terbium-1Thin films-1Wide band gap semiconductors-1Aluminum nitride thin films-1Annealing techniques-1Energy dispersive x-ray-1Luminescence properties-1Photo-luminescence excitation-1Post annealing treatment-1Post deposition annealing-1Radio frequency magnetron sputtering-1Magnetron sputtering-1https://purl.org/pe-repo/ocde/ford#1.03.01-1Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron 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</Affiliation> </Author> <Author> <DisplayName>Batentschuk M.</DisplayName> <Person id="rp01103" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingärtner R.</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Trans Tech Publications Ltd</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>X ray diffraction analysis</Keyword> <Keyword>Aluminum</Keyword> <Keyword>Aluminum coatings</Keyword> <Keyword>Aluminum nitride</Keyword> <Keyword>Annealing</Keyword> <Keyword>Cathodoluminescence</Keyword> <Keyword>Heat treatment</Keyword> <Keyword>Light</Keyword> <Keyword>Light emission</Keyword> <Keyword>Luminescence</Keyword> <Keyword>Luminescence of inorganic solids</Keyword> <Keyword>Nitrides</Keyword> <Keyword>Radio waves</Keyword> <Keyword>Rapid thermal processing</Keyword> <Keyword>Rare earths</Keyword> <Keyword>Terbium</Keyword> <Keyword>Thin films</Keyword> <Keyword>Wide band gap semiconductors</Keyword> <Keyword>Aluminum nitride thin films</Keyword> <Keyword>Annealing techniques</Keyword> <Keyword>Energy dispersive x-ray</Keyword> <Keyword>Luminescence properties</Keyword> <Keyword>Photo-luminescence excitation</Keyword> <Keyword>Post annealing treatment</Keyword> <Keyword>Post deposition annealing</Keyword> <Keyword>Radio frequency magnetron sputtering</Keyword> <Keyword>Magnetron sputtering</Keyword> <Abstract>Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1
score 13.434648
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