The Urbach focus and optical properties of amorphous hydrogenated SiC thin films

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We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultravio...

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Detalles Bibliográficos
Autores: Guerra, JA, Angulo, JR, Gomez, S, Llamoza, J, Montanez, LM, Tejada, A, Tofflinger, JA, Winnacker, A, Weingartner, R
Formato: artículo
Fecha de Publicación:2016
Institución:Consejo Nacional de Ciencia Tecnología e Innovación
Repositorio:CONCYTEC-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.concytec.gob.pe:20.500.12390/1155
Enlace del recurso:https://hdl.handle.net/20.500.12390/1155
https://doi.org/10.1088/0022-3727/49/19/195102
Nivel de acceso:acceso abierto
Materia:Urbach focus
Brazilian MRS
silicon carbide
https://purl.org/pe-repo/ocde/ford#1.03.00
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oai_identifier_str oai:repositorio.concytec.gob.pe:20.500.12390/1155
network_acronym_str CONC
network_name_str CONCYTEC-Institucional
repository_id_str 4689
dc.title.none.fl_str_mv The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
title The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
spellingShingle The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
Guerra, JA
Urbach focus
Brazilian MRS
Brazilian MRS
silicon carbide
https://purl.org/pe-repo/ocde/ford#1.03.00
title_short The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
title_full The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
title_fullStr The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
title_full_unstemmed The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
title_sort The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
author Guerra, JA
author_facet Guerra, JA
Angulo, JR
Gomez, S
Llamoza, J
Montanez, LM
Tejada, A
Tofflinger, JA
Winnacker, A
Weingartner, R
author_role author
author2 Angulo, JR
Gomez, S
Llamoza, J
Montanez, LM
Tejada, A
Tofflinger, JA
Winnacker, A
Weingartner, R
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Guerra, JA
Angulo, JR
Gomez, S
Llamoza, J
Montanez, LM
Tejada, A
Tofflinger, JA
Winnacker, A
Weingartner, R
dc.subject.none.fl_str_mv Urbach focus
topic Urbach focus
Brazilian MRS
Brazilian MRS
silicon carbide
https://purl.org/pe-repo/ocde/ford#1.03.00
dc.subject.es_PE.fl_str_mv Brazilian MRS
Brazilian MRS
silicon carbide
dc.subject.ocde.none.fl_str_mv https://purl.org/pe-repo/ocde/ford#1.03.00
description We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultraviolet-visible optical transmittance measurements. Additionally, the effect of the thermal annealing temperature on the hydrogen out-diffusion is assessed through infra-red absorption spectroscopy. A new model for the optical absorption of amorphous semiconductors is presented and employed to determine the bandgap as well as the Urbach energy from a single fit of the absorption coefficient. This model allowed the discrimination of the Urbach tail from the Tauc region without any external bias. Finally, the effect of the hydrogen dilution on the band-edge and the Urbach focus is discussed.
publishDate 2016
dc.date.accessioned.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.available.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.issued.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/20.500.12390/1155
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1088/0022-3727/49/19/195102
dc.identifier.isi.none.fl_str_mv 375255500010
url https://hdl.handle.net/20.500.12390/1155
https://doi.org/10.1088/0022-3727/49/19/195102
identifier_str_mv 375255500010
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv Journal of Physics D-Applied Physics
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONCYTEC-Institucional
instname:Consejo Nacional de Ciencia Tecnología e Innovación
instacron:CONCYTEC
instname_str Consejo Nacional de Ciencia Tecnología e Innovación
instacron_str CONCYTEC
institution CONCYTEC
reponame_str CONCYTEC-Institucional
collection CONCYTEC-Institucional
repository.name.fl_str_mv Repositorio Institucional CONCYTEC
repository.mail.fl_str_mv repositorio@concytec.gob.pe
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spelling Publicationrp00710500rp03269600rp00729400rp03148500rp00708500rp01802500rp00712500rp01553500rp00714500Guerra, JAAngulo, JRGomez, SLlamoza, JMontanez, LMTejada, ATofflinger, JAWinnacker, AWeingartner, R2024-05-30T23:13:38Z2024-05-30T23:13:38Z2016https://hdl.handle.net/20.500.12390/1155https://doi.org/10.1088/0022-3727/49/19/195102375255500010We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultraviolet-visible optical transmittance measurements. Additionally, the effect of the thermal annealing temperature on the hydrogen out-diffusion is assessed through infra-red absorption spectroscopy. A new model for the optical absorption of amorphous semiconductors is presented and employed to determine the bandgap as well as the Urbach energy from a single fit of the absorption coefficient. This model allowed the discrimination of the Urbach tail from the Tauc region without any external bias. Finally, the effect of the hydrogen dilution on the band-edge and the Urbach focus is discussed.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengIOP PublishingJournal of Physics D-Applied Physicsinfo:eu-repo/semantics/openAccessUrbach focusBrazilian MRS-1Brazilian MRS-1silicon carbide-1https://purl.org/pe-repo/ocde/ford#1.03.00-1The Urbach focus and optical properties of amorphous hydrogenated SiC thin filmsinfo:eu-repo/semantics/articlereponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#20.500.12390/1155oai:repositorio.concytec.gob.pe:20.500.12390/11552024-05-30 15:44:07.066http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="ee84df79-5e54-4935-a89f-70a70ee5b476"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>The Urbach focus and optical properties of amorphous hydrogenated SiC thin films</Title> <PublishedIn> <Publication> <Title>Journal of Physics D-Applied Physics</Title> </Publication> </PublishedIn> <PublicationDate>2016</PublicationDate> <DOI>https://doi.org/10.1088/0022-3727/49/19/195102</DOI> <ISI-Number>375255500010</ISI-Number> <Authors> <Author> <DisplayName>Guerra, JA</DisplayName> <Person id="rp00710" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Angulo, JR</DisplayName> <Person id="rp03269" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Gomez, S</DisplayName> <Person id="rp00729" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Llamoza, J</DisplayName> <Person id="rp03148" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Montanez, LM</DisplayName> <Person id="rp00708" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Tejada, A</DisplayName> <Person id="rp01802" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Tofflinger, JA</DisplayName> <Person id="rp00712" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Winnacker, A</DisplayName> <Person id="rp01553" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingartner, R</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>IOP Publishing</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>Urbach focus</Keyword> <Keyword>Brazilian MRS</Keyword> <Keyword>Brazilian MRS</Keyword> <Keyword>silicon carbide</Keyword> <Abstract>We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultraviolet-visible optical transmittance measurements. Additionally, the effect of the thermal annealing temperature on the hydrogen out-diffusion is assessed through infra-red absorption spectroscopy. A new model for the optical absorption of amorphous semiconductors is presented and employed to determine the bandgap as well as the Urbach energy from a single fit of the absorption coefficient. This model allowed the discrimination of the Urbach tail from the Tauc region without any external bias. Finally, the effect of the hydrogen dilution on the band-edge and the Urbach focus is discussed.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1
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The Urbach focus and optical properties of amorphous hydrogenated SiC thin films
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