In this work, we propose a method to retrieve the thickness and optical constants of dielectric thin films from single optical transmittance measurements. The method is based on the envelope method and requires a simple dispersion model for the real part of the refractive index with few fitting parameters, while the absorption coefficient can be determined without the aid of a dispersion model. The wavelength-dependent optical constants can be obtained even from spectra that exhibit few interference fringes. We have tested the method with simulated and real transmittance data from thin films in the spectral range covering the fundamental absorption. In order to assess the method’s reliability to retrieve the optical constants and optical bandgap, a comparison is performed with the method by Chambouleyron, known as the Pointwise Unconstrained Minimization Approach, and a fit using the C...

The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1– xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm. Optical constants, film thicknesses and roughness layers are obtained point-by-point by minimizing a global error function, without using optical dispersion models, and including topographical information supplied by a laser confocal microscope.

The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1– xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm.

We develop a band-fluctuations model which describes the absorption coefficient in the fundamental absorption region for direct and indirect electronic transitions in disordered semiconductor materials. The model accurately describes both the Urbach tail and absorption edge regions observed in such materials near the mobility edge in a single equation with only three fitting parameters. An asymptotic analysis leads to the universally observed exponential tail below the bandgap energy and to the absorption edge model at zero Kelvin above it, for either direct or indirect electronic transitions. The latter feature allows the discrimination between the absorption edge and absorption tails, thus yielding more accurate bandgap values when fitting optical absorption data. We examine the general character of the model using a dimensionless joint density of states formalism with a quantitative a...

We report the complex refractive index of methylammonium lead iodide (CH3NH3PbI3) perovskite thin films obtained by means of variable angle spectroscopic ellipsometry and transmittance/reflectance spectrophotometry in the wavelength range of 190 nm to 2500 nm. The film thickness and roughness layer thickness are determined by minimizing a global unbiased estimator in the region where the spectrophotometry and ellipsometry spectra overlap. We then determine the optical bandgap and Urbach energy from the absorption coefficient, by means of a fundamental absorption model based on band fluctuations in direct semiconductors. This model merges both the Urbach tail and the absorption edge regions in a single equation. In this way, we increase the fitting region and extend the conventional (αℏω)2-plot method to obtain accurate bandgap values. © 2017 Author(s).

We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultraviolet-visible optical transmittance measurements. Additionally, the effect of the thermal annealing temperature on the hydrogen out-diffusion is assessed through infra-red absorption spectroscopy. A new model for the optical absorption of amorphous semiconductors is presented and employed to determine the bandgap as well as the Urbach energy from a single fit of the absorption coefficient. This model allowed the discrimination of the Urbach tail from the Tauc region without any external bias. Finally, the effect of the hydrogen dilution on the band-edge and the Urbach focus is discussed.

The authors acknowledge funding from the Federal Ministry of Education and Research (BMBF) for funding of the Young Investigator Group Perovskite Tandem Solar Cells within the program “Materialforschung für die Energiewende” (grant no. 03SF0540), the Helmholtz Association within the HySPRINT Innovation lab project, and the HyPerCells joint Graduate School. This research was supported by the joint agreement between the DAAD (German Academic Exchange Service) and FONDECYT (National Fund for Scientific, Technological Development and Technological Innovation) under the agreements 57508544 DAAD and 423-2019-FONDECYT. Further support has been provided by the PUCP vice chancellorship for research (VRI, project no. CAP-2019-3-0041/702). The authors thank Thomas Lußky for technical support, Bor Li for part of the sample preparation, and Norbert Koch, David Cahen, Isaac Balberg and Norbert N...

This study aimed to identify new B. bacilliformis antigenic candidates that could lead to a new diagnostic tool able to be implemented in endemic rural areas. RT-PCR and the high levels of positivity for specific ELISAs demonstrate high levels of B. bacilliformis exposure and asymptomatic carriers among inhabitants. The new antigens identified might be used as a new rapid diagnostic tool to diagnose acute Carrion’s disease and identify asymptomatic carriers.