Thin film Solar Cells based on Semiconductor Oxides: Ti3O5, Bi2O0

• Autores: Rodríguez, Sandro, Gutiérrez Rivera, Luis, Castillo Ocaña, Guido, Maldonado, Cesar, Valera Palacios, Aníbal
• Formato: artículo
• Fecha de Publicación: 2000
• Institución: Universidad Nacional de Ingeniería
• Repositorio: Revistas - Universidad Nacional de Ingeniería
• Lenguaje: español
• OAI Identifier: oai:oai:revistas.uni.edu.pe:article/463
• Enlace del recurso: https://revistas.uni.edu.pe/index.php/tecnia/article/view/463
• Nivel de acceso: acceso abierto

In this work, the first results of the development and characterization of thin film solar cells based on oxide semiconductors are presented: Schottky Union of Titanium Oxide (Ti3O5) and Aluminum (A1), pn Union of Bismuth Oxide (Bi2O3) and Oxide of copper (Cu2O). The titanium (p) oxide films were prepared by the vacuum evaporation method. The titanium (p) oxide films were prepared by thermal treatment of Bismuth layers evaporated under vacuum. The results of the measurements carried out on the titanium oxide and bismuth oxide semiconductor films and the resulting spectral quantum efficiency of the constructed solar cells are presented. Finally, the theoretical interpretation of the observed results is presented.