Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells

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The authors would like to acknowledge the financial support of the Peruvian science foundation Cienciactiva in the framework of the DAAD-CONCYTEC joint project (2017-2019), the “Círculo de investigación” project and the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú...

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Autores: Tucto K., Flores L., Guerra J., Töfflinger J., Dulanto J., Grieseler R., Osvet A., Batentschuk M., Weingärtner R.
Formato: objeto de conferencia
Fecha de Publicación:2017
Institución:Consejo Nacional de Ciencia Tecnología e Innovación
Repositorio:CONCYTEC-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.concytec.gob.pe:20.500.12390/753
Enlace del recurso:https://hdl.handle.net/20.500.12390/753
https://doi.org/10.1557/adv.2017.478
Nivel de acceso:acceso abierto
Materia:Ytterbium compounds
Aluminum compounds
Annealing
Cobalt compounds
Energy dispersive X ray analysis
Infrared devices
Luminescence
Nitrides
Photoelectrochemical cells
Photovoltaic cells
Rare earth elements
Semiconductor doping
Sputtering
Thin films
X ray diffraction analysis
Aluminum oxynitride
Aluminum oxynitride thin films
Annealing temperatures
Doping concentration
Near-infrared emissions
Photoluminescence measurements
Radio frequency magnetron sputtering
Silicon substrates
https://purl.org/pe-repo/ocde/ford#2.07.00
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network_acronym_str CONC
network_name_str CONCYTEC-Institucional
repository_id_str 4689
dc.title.none.fl_str_mv Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
title Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
spellingShingle Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
Tucto K.
Ytterbium compounds
Aluminum compounds
Annealing
Cobalt compounds
Energy dispersive X ray analysis
Energy dispersive X ray analysis
Infrared devices
Infrared devices
Luminescence
Nitrides
Photoelectrochemical cells
Photovoltaic cells
Rare earth elements
Semiconductor doping
Sputtering
Thin films
X ray diffraction analysis
X ray diffraction analysis
Aluminum oxynitride
Aluminum oxynitride
Aluminum oxynitride thin films
Annealing temperatures
Doping concentration
Near-infrared emissions
Photoluminescence measurements
Radio frequency magnetron sputtering
Silicon substrates
https://purl.org/pe-repo/ocde/ford#2.07.00
title_short Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
title_full Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
title_fullStr Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
title_full_unstemmed Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
title_sort Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells
author Tucto K.
author_facet Tucto K.
Flores L.
Guerra J.
Töfflinger J.
Dulanto J.
Grieseler R.
Osvet A.
Batentschuk M.
Weingärtner R.
author_role author
author2 Flores L.
Guerra J.
Töfflinger J.
Dulanto J.
Grieseler R.
Osvet A.
Batentschuk M.
Weingärtner R.
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Tucto K.
Flores L.
Guerra J.
Töfflinger J.
Dulanto J.
Grieseler R.
Osvet A.
Batentschuk M.
Weingärtner R.
dc.subject.none.fl_str_mv Ytterbium compounds
topic Ytterbium compounds
Aluminum compounds
Annealing
Cobalt compounds
Energy dispersive X ray analysis
Energy dispersive X ray analysis
Infrared devices
Infrared devices
Luminescence
Nitrides
Photoelectrochemical cells
Photovoltaic cells
Rare earth elements
Semiconductor doping
Sputtering
Thin films
X ray diffraction analysis
X ray diffraction analysis
Aluminum oxynitride
Aluminum oxynitride
Aluminum oxynitride thin films
Annealing temperatures
Doping concentration
Near-infrared emissions
Photoluminescence measurements
Radio frequency magnetron sputtering
Silicon substrates
https://purl.org/pe-repo/ocde/ford#2.07.00
dc.subject.es_PE.fl_str_mv Aluminum compounds
Annealing
Cobalt compounds
Energy dispersive X ray analysis
Energy dispersive X ray analysis
Infrared devices
Infrared devices
Luminescence
Nitrides
Photoelectrochemical cells
Photovoltaic cells
Rare earth elements
Semiconductor doping
Sputtering
Thin films
X ray diffraction analysis
X ray diffraction analysis
Aluminum oxynitride
Aluminum oxynitride
Aluminum oxynitride thin films
Annealing temperatures
Doping concentration
Near-infrared emissions
Photoluminescence measurements
Radio frequency magnetron sputtering
Silicon substrates
dc.subject.ocde.none.fl_str_mv https://purl.org/pe-repo/ocde/ford#2.07.00
description The authors would like to acknowledge the financial support of the Peruvian science foundation Cienciactiva in the framework of the DAAD-CONCYTEC joint project (2017-2019), the “Círculo de investigación” project and the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The research activity was performed in the framework of the doctoral scholarship of K. Tucto and L. Flores from CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYT-DE, respectively. The authors are also grateful to the Center of Microcharacterization (CAM) of the PUCP for the EDX and PL measurements.
publishDate 2017
dc.date.accessioned.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.available.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.issued.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/20.500.12390/753
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1557/adv.2017.478
dc.identifier.scopus.none.fl_str_mv 2-s2.0-85047181476
url https://hdl.handle.net/20.500.12390/753
https://doi.org/10.1557/adv.2017.478
identifier_str_mv 2-s2.0-85047181476
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv MRS Advances
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Materials Research Society
publisher.none.fl_str_mv Materials Research Society
dc.source.none.fl_str_mv reponame:CONCYTEC-Institucional
instname:Consejo Nacional de Ciencia Tecnología e Innovación
instacron:CONCYTEC
instname_str Consejo Nacional de Ciencia Tecnología e Innovación
instacron_str CONCYTEC
institution CONCYTEC
reponame_str CONCYTEC-Institucional
collection CONCYTEC-Institucional
repository.name.fl_str_mv Repositorio Institucional CONCYTEC
repository.mail.fl_str_mv repositorio@concytec.gob.pe
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spelling Publicationrp00713400rp01552500rp00710500rp00712500rp01922600rp01106500rp01107500rp01103500rp00714500Tucto K.Flores L.Guerra J.Töfflinger J.Dulanto J.Grieseler R.Osvet A.Batentschuk M.Weingärtner R.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2017https://hdl.handle.net/20.500.12390/753https://doi.org/10.1557/adv.2017.4782-s2.0-85047181476The authors would like to acknowledge the financial support of the Peruvian science foundation Cienciactiva in the framework of the DAAD-CONCYTEC joint project (2017-2019), the “Círculo de investigación” project and the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The research activity was performed in the framework of the doctoral scholarship of K. Tucto and L. Flores from CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYT-DE, respectively. The authors are also grateful to the Center of Microcharacterization (CAM) of the PUCP for the EDX and PL measurements.Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150ºC to 850ºC in steps of 100ºC. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 → 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengMaterials Research SocietyMRS Advancesinfo:eu-repo/semantics/openAccessYtterbium compoundsAluminum compounds-1Annealing-1Cobalt compounds-1Energy dispersive X ray analysis-1Energy dispersive X ray analysis-1Infrared devices-1Infrared devices-1Luminescence-1Nitrides-1Photoelectrochemical cells-1Photovoltaic cells-1Rare earth elements-1Semiconductor doping-1Sputtering-1Thin films-1X ray diffraction analysis-1X ray diffraction analysis-1Aluminum oxynitride-1Aluminum oxynitride-1Aluminum oxynitride thin films-1Annealing temperatures-1Doping concentration-1Near-infrared emissions-1Photoluminescence measurements-1Radio frequency magnetron sputtering-1Silicon substrates-1https://purl.org/pe-repo/ocde/ford#2.07.00-1Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cellsinfo:eu-repo/semantics/conferenceObjectreponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#20.500.12390/753oai:repositorio.concytec.gob.pe:20.500.12390/7532024-05-30 15:22:50.111http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="22f4657d-c576-471a-9dfa-ec985c17ed19"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells</Title> <PublishedIn> <Publication> <Title>MRS Advances</Title> </Publication> </PublishedIn> <PublicationDate>2017</PublicationDate> <DOI>https://doi.org/10.1557/adv.2017.478</DOI> <SCP-Number>2-s2.0-85047181476</SCP-Number> <Authors> <Author> <DisplayName>Tucto K.</DisplayName> <Person id="rp00713" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Flores L.</DisplayName> <Person id="rp01552" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Guerra J.</DisplayName> <Person id="rp00710" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Töfflinger J.</DisplayName> <Person id="rp00712" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Dulanto J.</DisplayName> <Person id="rp01922" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Grieseler R.</DisplayName> <Person id="rp01106" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Osvet A.</DisplayName> <Person id="rp01107" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Batentschuk M.</DisplayName> <Person id="rp01103" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingärtner R.</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Materials Research Society</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>Ytterbium compounds</Keyword> <Keyword>Aluminum compounds</Keyword> <Keyword>Annealing</Keyword> <Keyword>Cobalt compounds</Keyword> <Keyword>Energy dispersive X ray analysis</Keyword> <Keyword>Energy dispersive X ray analysis</Keyword> <Keyword>Infrared devices</Keyword> <Keyword>Infrared devices</Keyword> <Keyword>Luminescence</Keyword> <Keyword>Nitrides</Keyword> <Keyword>Photoelectrochemical cells</Keyword> <Keyword>Photovoltaic cells</Keyword> <Keyword>Rare earth elements</Keyword> <Keyword>Semiconductor doping</Keyword> <Keyword>Sputtering</Keyword> <Keyword>Thin films</Keyword> <Keyword>X ray diffraction analysis</Keyword> <Keyword>X ray diffraction analysis</Keyword> <Keyword>Aluminum oxynitride</Keyword> <Keyword>Aluminum oxynitride</Keyword> <Keyword>Aluminum oxynitride thin films</Keyword> <Keyword>Annealing temperatures</Keyword> <Keyword>Doping concentration</Keyword> <Keyword>Near-infrared emissions</Keyword> <Keyword>Photoluminescence measurements</Keyword> <Keyword>Radio frequency magnetron sputtering</Keyword> <Keyword>Silicon substrates</Keyword> <Abstract>Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150ºC to 850ºC in steps of 100ºC. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 → 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1
score 13.448654
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