We report the complex refractive index of methylammonium lead iodide (CH3NH3PbI3) perovskite thin films obtained by means of variable angle spectroscopic ellipsometry and transmittance/reflectance spectrophotometry in the wavelength range of 190 nm to 2500 nm. The film thickness and roughness layer thickness are determined by minimizing a global unbiased estimator in the region where the spectrophotometry and ellipsometry spectra overlap. We then determine the optical bandgap and Urbach energy from the absorption coefficient, by means of a fundamental absorption model based on band fluctuations in direct semiconductors. This model merges both the Urbach tail and the absorption edge regions in a single equation. In this way, we increase the fitting region and extend the conventional (αℏω)2-plot method to obtain accurate bandgap values. © 2017 Author(s).

This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements.

The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1– xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm.

Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge density (Q(ox)) and the interface trap density (D-it) which can be extracted from Capacitance-Voltage measurements (CV). In this paper, simulations of High-Frequency Capacitance-Voltage (HF-CV) curves were developed using simulated passivation parameters in order to examine the reliability of measured results. The D-it was modelled by two different sets of functions: First, the sum of Gaussian functions representing different dangling bond types and exponential tails for strained bonds. Second, a simpler U-shape model represented by the sum of exponential tails and a constant value function was employed. These simulations were validated using experimental measurements of a referenc...

The authors would like to acknowledge the financial support of the Peruvian science foundation Cienciactiva in the framework of the DAAD-CONCYTEC joint project (2017-2019), the “Círculo de investigación” project and the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The research activity was performed in the framework of the doctoral scholarship of K. Tucto and L. Flores from CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYT-DE, respectively. The authors are also grateful to the Center of Microcharacterization (CAM) of the PUCP for the EDX and PL measurements.

This work was supported by the Peruvian science foundation CIENCIACTIVA of CONCYTEC and DAAD-CONCYTEC project (2017–2019). The Research Management Office (DGI) of the the Pontificia Universidad Católica del Perú (PUCP) project 492-2017. The research activity was performed in the framework of the doctoral scholarship of L. F. Flores under the contract number 236-2015-FONDECYT. The authors are also thankful to the Center of Materials Characterization (CAM) and the Institute of Corrosion and Protection (ICP) of the PUCP for the EDX, PL and FTIR measurements.