Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films

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This work was supported by the Peruvian science foundation CIENCIACTIVA of CONCYTEC and DAAD-CONCYTEC project (2017–2019). The Research Management Office (DGI) of the the Pontificia Universidad Católica del Perú (PUCP) project 492-2017. The research activity was performed in the framework of the doc...

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Autores: Flores L.F., Tucto K.Y., Guerra J.A., Töfflinger J.A., Serquen E.S., Osvet A., Batentschuk M., Winnacker A., Grieseler R., Weingärtner R.
Formato: artículo
Fecha de Publicación:2019
Institución:Consejo Nacional de Ciencia Tecnología e Innovación
Repositorio:CONCYTEC-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.concytec.gob.pe:20.500.12390/683
Enlace del recurso:https://hdl.handle.net/20.500.12390/683
https://doi.org/10.1016/j.optmat.2019.04.003
Nivel de acceso:acceso abierto
Materia:Ytterbium alloys
Amorphous films
Annealing
Binary alloys
Chemical activation
Energy dispersive spectroscopy
Energy transfer
Fourier transform infrared spectroscopy
Luminescence of inorganic solids
Photoluminescence
Rare earths
Silicon carbide
Silicon compounds
Terbium
Terbium alloys
Thin films
Ytterbium
Amorphous silicon oxycarbide
Energy dispersive X ray spectroscopy
Photoluminescence decay curves
Photoluminescence excitation spectrum
Photoluminescence intensities
Photoluminescence lifetime
rf-Magnetron sputtering
Silicon oxycarbides
Amorphous silicon
https://purl.org/pe-repo/ocde/ford#1.03.00
id CONC_e28826b192d7e659de95256024e4cf24
oai_identifier_str oai:repositorio.concytec.gob.pe:20.500.12390/683
network_acronym_str CONC
network_name_str CONCYTEC-Institucional
repository_id_str 4689
dc.title.none.fl_str_mv Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
title Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
spellingShingle Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
Flores L.F.
Ytterbium alloys
Amorphous films
Annealing
Binary alloys
Chemical activation
Energy dispersive spectroscopy
Energy transfer
Fourier transform infrared spectroscopy
Luminescence of inorganic solids
Photoluminescence
Rare earths
Silicon carbide
Silicon compounds
Terbium
Terbium
Terbium alloys
Thin films
Ytterbium
Amorphous silicon oxycarbide
Energy dispersive X ray spectroscopy
Photoluminescence decay curves
Photoluminescence excitation spectrum
Photoluminescence intensities
Photoluminescence lifetime
rf-Magnetron sputtering
Silicon oxycarbides
Amorphous silicon
https://purl.org/pe-repo/ocde/ford#1.03.00
title_short Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
title_full Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
title_fullStr Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
title_full_unstemmed Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
title_sort Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
author Flores L.F.
author_facet Flores L.F.
Tucto K.Y.
Guerra J.A.
Töfflinger J.A.
Serquen E.S.
Osvet A.
Batentschuk M.
Winnacker A.
Grieseler R.
Weingärtner R.
author_role author
author2 Tucto K.Y.
Guerra J.A.
Töfflinger J.A.
Serquen E.S.
Osvet A.
Batentschuk M.
Winnacker A.
Grieseler R.
Weingärtner R.
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Flores L.F.
Tucto K.Y.
Guerra J.A.
Töfflinger J.A.
Serquen E.S.
Osvet A.
Batentschuk M.
Winnacker A.
Grieseler R.
Weingärtner R.
dc.subject.none.fl_str_mv Ytterbium alloys
topic Ytterbium alloys
Amorphous films
Annealing
Binary alloys
Chemical activation
Energy dispersive spectroscopy
Energy transfer
Fourier transform infrared spectroscopy
Luminescence of inorganic solids
Photoluminescence
Rare earths
Silicon carbide
Silicon compounds
Terbium
Terbium
Terbium alloys
Thin films
Ytterbium
Amorphous silicon oxycarbide
Energy dispersive X ray spectroscopy
Photoluminescence decay curves
Photoluminescence excitation spectrum
Photoluminescence intensities
Photoluminescence lifetime
rf-Magnetron sputtering
Silicon oxycarbides
Amorphous silicon
https://purl.org/pe-repo/ocde/ford#1.03.00
dc.subject.es_PE.fl_str_mv Amorphous films
Annealing
Binary alloys
Chemical activation
Energy dispersive spectroscopy
Energy transfer
Fourier transform infrared spectroscopy
Luminescence of inorganic solids
Photoluminescence
Rare earths
Silicon carbide
Silicon compounds
Terbium
Terbium
Terbium alloys
Thin films
Ytterbium
Amorphous silicon oxycarbide
Energy dispersive X ray spectroscopy
Photoluminescence decay curves
Photoluminescence excitation spectrum
Photoluminescence intensities
Photoluminescence lifetime
rf-Magnetron sputtering
Silicon oxycarbides
Amorphous silicon
dc.subject.ocde.none.fl_str_mv https://purl.org/pe-repo/ocde/ford#1.03.00
description This work was supported by the Peruvian science foundation CIENCIACTIVA of CONCYTEC and DAAD-CONCYTEC project (2017–2019). The Research Management Office (DGI) of the the Pontificia Universidad Católica del Perú (PUCP) project 492-2017. The research activity was performed in the framework of the doctoral scholarship of L. F. Flores under the contract number 236-2015-FONDECYT. The authors are also thankful to the Center of Materials Characterization (CAM) and the Institute of Corrosion and Protection (ICP) of the PUCP for the EDX, PL and FTIR measurements.
publishDate 2019
dc.date.accessioned.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.available.none.fl_str_mv 2024-05-30T23:13:38Z
dc.date.issued.fl_str_mv 2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/20.500.12390/683
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1016/j.optmat.2019.04.003
dc.identifier.scopus.none.fl_str_mv 2-s2.0-85064069229
url https://hdl.handle.net/20.500.12390/683
https://doi.org/10.1016/j.optmat.2019.04.003
identifier_str_mv 2-s2.0-85064069229
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv Optical Materials
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.rights.uri.none.fl_str_mv https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/4.0/
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv reponame:CONCYTEC-Institucional
instname:Consejo Nacional de Ciencia Tecnología e Innovación
instacron:CONCYTEC
instname_str Consejo Nacional de Ciencia Tecnología e Innovación
instacron_str CONCYTEC
institution CONCYTEC
reponame_str CONCYTEC-Institucional
collection CONCYTEC-Institucional
repository.name.fl_str_mv Repositorio Institucional CONCYTEC
repository.mail.fl_str_mv repositorio@concytec.gob.pe
_version_ 1844883013526093824
spelling Publicationrp01552600rp01551600rp00710500rp00712500rp01550600rp01107500rp01103500rp01553600rp01106500rp00714500Flores L.F.Tucto K.Y.Guerra J.A.Töfflinger J.A.Serquen E.S.Osvet A.Batentschuk M.Winnacker A.Grieseler R.Weingärtner R.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2019https://hdl.handle.net/20.500.12390/683https://doi.org/10.1016/j.optmat.2019.04.0032-s2.0-85064069229This work was supported by the Peruvian science foundation CIENCIACTIVA of CONCYTEC and DAAD-CONCYTEC project (2017–2019). The Research Management Office (DGI) of the the Pontificia Universidad Católica del Perú (PUCP) project 492-2017. The research activity was performed in the framework of the doctoral scholarship of L. F. Flores under the contract number 236-2015-FONDECYT. The authors are also thankful to the Center of Materials Characterization (CAM) and the Institute of Corrosion and Protection (ICP) of the PUCP for the EDX, PL and FTIR measurements.This work analyzes the photoluminescence emission of Yb3+ and Tb3+ ions in co-doped silicon oxycarbide thin films, their activation by thermal treatment, and reveals their luminescent properties regarding the energy transfer between them. Three samples of silicon oxycarbide were prepared by rf magnetron sputtering from SiC, Yb and Tb targets in an oxygen/argon atmosphere. The first one is the undoped silicon oxycarbide sample, the second one is Tb single doped, and the last one is the Yb-Tb co-doped sample. All three samples are identified as silicon oxycarbides with a low carbon content using energy dispersive X-ray spectroscopy and Fourier transform infrared spectroscopy. The latter shows the presence of the vibrational modes of Si–C and Si–O bonds. Subsequent annealing treatments up to temperatures of 750 °C led to the rare earths optical activation in the samples. For each annealing step, we present the photoluminescence spectra using an above-bandgap excitation of 325 nm. The Tb3+ and Yb3+ -related luminescence lines were identified. The Yb3+ ions luminescence for the co-doped sample shows concentration quenching above annealing temperatures of 500 °C whereas the Tb3+ ions luminescence intensity remains almost constant. The analysis of the photoluminescence excitation spectra shows the direct excitation of the Tb3+ ions in the Tb-doped samples. A high suppression of the direct excitation of the Tb3+ ions in the Yb-Tb co-doped samples was observed. The energy transfer from Tb3+ to Yb3+ ions in co-doped samples is evidenced, first, by the decrease of the Tb3+ photoluminescence intensity in the co-doped compared to the Tb doped sample. Second, a change from nearly single exponential to nonexponential decay in the Tb3+ photoluminescence decay curves and third, by the reduction of the Tb3+ decay time from 1.2  ms in the Tb-doped sample to 0.5  ms in the Yb-Tb co-doped sample.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengElsevier B.V.Optical Materialsinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/4.0/Ytterbium alloysAmorphous films-1Annealing-1Binary alloys-1Chemical activation-1Energy dispersive spectroscopy-1Energy transfer-1Fourier transform infrared spectroscopy-1Luminescence of inorganic solids-1Photoluminescence-1Rare earths-1Silicon carbide-1Silicon compounds-1Terbium-1Terbium-1Terbium alloys-1Thin films-1Ytterbium-1Amorphous silicon oxycarbide-1Energy dispersive X ray spectroscopy-1Photoluminescence decay curves-1Photoluminescence excitation spectrum-1Photoluminescence intensities-1Photoluminescence lifetime-1rf-Magnetron sputtering-1Silicon oxycarbides-1Amorphous silicon-1https://purl.org/pe-repo/ocde/ford#1.03.00-1Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin filmsinfo:eu-repo/semantics/articlereponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#20.500.12390/683oai:repositorio.concytec.gob.pe:20.500.12390/6832024-05-30 15:22:39.637https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="aad57798-fdfa-415c-bddf-fbdccc458cc8"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films</Title> <PublishedIn> <Publication> <Title>Optical Materials</Title> </Publication> </PublishedIn> <PublicationDate>2019</PublicationDate> <DOI>https://doi.org/10.1016/j.optmat.2019.04.003</DOI> <SCP-Number>2-s2.0-85064069229</SCP-Number> <Authors> <Author> <DisplayName>Flores L.F.</DisplayName> <Person id="rp01552" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Tucto K.Y.</DisplayName> <Person id="rp01551" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Guerra J.A.</DisplayName> <Person id="rp00710" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Töfflinger J.A.</DisplayName> <Person id="rp00712" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Serquen E.S.</DisplayName> <Person id="rp01550" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Osvet A.</DisplayName> <Person id="rp01107" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Batentschuk M.</DisplayName> <Person id="rp01103" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Winnacker A.</DisplayName> <Person id="rp01553" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Grieseler R.</DisplayName> <Person id="rp01106" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingärtner R.</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Elsevier B.V.</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>https://creativecommons.org/licenses/by/4.0/</License> <Keyword>Ytterbium alloys</Keyword> <Keyword>Amorphous films</Keyword> <Keyword>Annealing</Keyword> <Keyword>Binary alloys</Keyword> <Keyword>Chemical activation</Keyword> <Keyword>Energy dispersive spectroscopy</Keyword> <Keyword>Energy transfer</Keyword> <Keyword>Fourier transform infrared spectroscopy</Keyword> <Keyword>Luminescence of inorganic solids</Keyword> <Keyword>Photoluminescence</Keyword> <Keyword>Rare earths</Keyword> <Keyword>Silicon carbide</Keyword> <Keyword>Silicon compounds</Keyword> <Keyword>Terbium</Keyword> <Keyword>Terbium</Keyword> <Keyword>Terbium alloys</Keyword> <Keyword>Thin films</Keyword> <Keyword>Ytterbium</Keyword> <Keyword>Amorphous silicon oxycarbide</Keyword> <Keyword>Energy dispersive X ray spectroscopy</Keyword> <Keyword>Photoluminescence decay curves</Keyword> <Keyword>Photoluminescence excitation spectrum</Keyword> <Keyword>Photoluminescence intensities</Keyword> <Keyword>Photoluminescence lifetime</Keyword> <Keyword>rf-Magnetron sputtering</Keyword> <Keyword>Silicon oxycarbides</Keyword> <Keyword>Amorphous silicon</Keyword> <Abstract>This work analyzes the photoluminescence emission of Yb3+ and Tb3+ ions in co-doped silicon oxycarbide thin films, their activation by thermal treatment, and reveals their luminescent properties regarding the energy transfer between them. Three samples of silicon oxycarbide were prepared by rf magnetron sputtering from SiC, Yb and Tb targets in an oxygen/argon atmosphere. The first one is the undoped silicon oxycarbide sample, the second one is Tb single doped, and the last one is the Yb-Tb co-doped sample. All three samples are identified as silicon oxycarbides with a low carbon content using energy dispersive X-ray spectroscopy and Fourier transform infrared spectroscopy. The latter shows the presence of the vibrational modes of Si–C and Si–O bonds. Subsequent annealing treatments up to temperatures of 750 °C led to the rare earths optical activation in the samples. For each annealing step, we present the photoluminescence spectra using an above-bandgap excitation of 325 nm. The Tb3+ and Yb3+ -related luminescence lines were identified. The Yb3+ ions luminescence for the co-doped sample shows concentration quenching above annealing temperatures of 500 °C whereas the Tb3+ ions luminescence intensity remains almost constant. The analysis of the photoluminescence excitation spectra shows the direct excitation of the Tb3+ ions in the Tb-doped samples. A high suppression of the direct excitation of the Tb3+ ions in the Yb-Tb co-doped samples was observed. The energy transfer from Tb3+ to Yb3+ ions in co-doped samples is evidenced, first, by the decrease of the Tb3+ photoluminescence intensity in the co-doped compared to the Tb doped sample. Second, a change from nearly single exponential to nonexponential decay in the Tb3+ photoluminescence decay curves and third, by the reduction of the Tb3+ decay time from 1.2  ms in the Tb-doped sample to 0.5  ms in the Yb-Tb co-doped sample.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1
score 13.394457
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