Passivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOx

• Autores: Preissler, Natalie, Amkreutz, Daniel, Dulanto, Jorge, Tofflinger, Jan Amaru, Cham Thi Trinh, Trahms, Martina, Abou-Ras, Daniel, Kirmse, Holm, Weingartner, Roland, Rech, Bernd, Schlatmann, Rutger
• Formato: artículo
• Fecha de Publicación: 2018
• Institución: Consejo Nacional de Ciencia Tecnología e Innovación
• Repositorio: CONCYTEC-Institucional
• Lenguaje: inglés
• OAI Identifier: oai:repositorio.concytec.gob.pe:20.500.12390/2839
• Enlace del recurso: https://hdl.handle.net/20.500.12390/2839; https://doi.org/10.1002/pssa.201800239
• Nivel de acceso: acceso abierto
• Materia: Surfaces and Interfaces; Materials Chemistry; Electrical and Electronic Engineering; Surfaces; Coatings and Films; Condensed Matter Physics; Electronic; Optical and Magnetic Materials; http://purl.org/pe-repo/ocde/ford#2.05.01

Silicon nitride (SiNx) and silicon oxide (SiOx) grown with plasma-enhanced chemical vapor deposition are used to passivate the front-side of liquid-phase crystallized silicon (LPC-Si). The dielectric layer/LPC-Si interface is smooth and layers are well-defined as demonstrated with transmission electron microscopy. Using electron energy loss spectroscopy a thin silicon oxynitride is detected which is related to oxidation of the SiNx prior to the silicon deposition. The interface defect state density (D-it) and the effective fixed charge density (Q(IL,eff)) are obtained from high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on SiOx/SiNx/LPC-Si and SiOx/SiNx/SiOx/LPC-Si sequences. Charge transfer across the SiNx/LPC-Si interface is observed which does not occur with the thin SiOx between SiNx and LPC-Si. The SiOx/SiNx/LPC-Si interface is characterized by Q(IL,eff)>10(12)cm(-2) and D-it,D-MG>10(12)eV(-1)cm(-2). With SiOx/SiNx/SiOx stack, both parameters are around one order of magnitude lower. Based on obtained Q(IL,eff) and D-it(E) and capture cross sections for electrons and holes of sigma(n)=10(-14)cms(-1) and sigma(p)=10(-16)cms(-1), respectively, a front-side surface recombination velocity in the range of 10cms(-1) at both interfaces is determined using the extended Shockley-Read-Hall recombination model. Results indicate that field-effect passivation is strong, especially with SiOx/SiNx stack.