Silicon nitride (SiNx) and silicon oxide (SiOx) grown with plasma-enhanced chemical vapor deposition are used to passivate the front-side of liquid-phase crystallized silicon (LPC-Si). The dielectric layer/LPC-Si interface is smooth and layers are well-defined as demonstrated with transmission electron microscopy. Using electron energy loss spectroscopy a thin silicon oxynitride is detected which is related to oxidation of the SiNx prior to the silicon deposition. The interface defect state density (D-it) and the effective fixed charge density (Q(IL,eff)) are obtained from high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on SiOx/SiNx/LPC-Si and SiOx/SiNx/SiOx/LPC-Si sequences. Charge transfer across the SiNx/LPC-Si interface is observed which does not occur with the thin SiOx between SiNx and LPC-Si. The SiOx/SiNx/LPC-Si interfac...