An improved 1D diode model for the accurate modeling of parasitics in silicon modulators
Descripción del Articulo
The authors acknowledge funding support from CONCYTEC-FONDECYT within the call E041-01 [contract number 015-2018-FONDECYT/BM]. H.E.H. acknowledges funding support from the Brazilian Agency CNPq under Projects No 465757/2014-6 (INCT FOTONICOM) and No 312714/2019-2 (HEH’s Research Productivity Grant)...
| Autores: | , , , |
|---|---|
| Formato: | objeto de conferencia |
| Fecha de Publicación: | 2021 |
| Institución: | Consejo Nacional de Ciencia Tecnología e Innovación |
| Repositorio: | CONCYTEC-Institucional |
| Lenguaje: | inglés |
| OAI Identifier: | oai:repositorio.concytec.gob.pe:20.500.12390/2969 |
| Enlace del recurso: | https://hdl.handle.net/20.500.12390/2969 https://doi.org/10.1117/12.2578357 |
| Nivel de acceso: | acceso abierto |
| Materia: | silicon photonics carrier depletion electro-optics optical modulators https://purl.org/pe-repo/ocde/ford#2.02.04 |
| id |
CONC_2b1422ee0485af84cca9cc454735efc9 |
|---|---|
| oai_identifier_str |
oai:repositorio.concytec.gob.pe:20.500.12390/2969 |
| network_acronym_str |
CONC |
| network_name_str |
CONCYTEC-Institucional |
| repository_id_str |
4689 |
| dc.title.none.fl_str_mv |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| title |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| spellingShingle |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators Prosopio-Galarza R.R. silicon photonics carrier depletion electro-optics electro-optics optical modulators https://purl.org/pe-repo/ocde/ford#2.02.04 |
| title_short |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| title_full |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| title_fullStr |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| title_full_unstemmed |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| title_sort |
An improved 1D diode model for the accurate modeling of parasitics in silicon modulators |
| author |
Prosopio-Galarza R.R. |
| author_facet |
Prosopio-Galarza R.R. Adanaque-Infante L.A. Hernandez-Figueroa H.E. Rubio-Noriega R.E. |
| author_role |
author |
| author2 |
Adanaque-Infante L.A. Hernandez-Figueroa H.E. Rubio-Noriega R.E. |
| author2_role |
author author author |
| dc.contributor.author.fl_str_mv |
Prosopio-Galarza R.R. Adanaque-Infante L.A. Hernandez-Figueroa H.E. Rubio-Noriega R.E. |
| dc.subject.none.fl_str_mv |
silicon photonics |
| topic |
silicon photonics carrier depletion electro-optics electro-optics optical modulators https://purl.org/pe-repo/ocde/ford#2.02.04 |
| dc.subject.es_PE.fl_str_mv |
carrier depletion electro-optics electro-optics optical modulators |
| dc.subject.ocde.none.fl_str_mv |
https://purl.org/pe-repo/ocde/ford#2.02.04 |
| description |
The authors acknowledge funding support from CONCYTEC-FONDECYT within the call E041-01 [contract number 015-2018-FONDECYT/BM]. H.E.H. acknowledges funding support from the Brazilian Agency CNPq under Projects No 465757/2014-6 (INCT FOTONICOM) and No 312714/2019-2 (HEH’s Research Productivity Grant) |
| publishDate |
2021 |
| dc.date.accessioned.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.available.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.issued.fl_str_mv |
2021 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
| format |
conferenceObject |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/20.500.12390/2969 |
| dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1117/12.2578357 |
| dc.identifier.scopus.none.fl_str_mv |
2-s2.0-85105941485 |
| url |
https://hdl.handle.net/20.500.12390/2969 https://doi.org/10.1117/12.2578357 |
| identifier_str_mv |
2-s2.0-85105941485 |
| dc.language.iso.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartof.none.fl_str_mv |
Proceedings of SPIE - The International Society for Optical Engineering |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
SPIE |
| publisher.none.fl_str_mv |
SPIE |
| dc.source.none.fl_str_mv |
reponame:CONCYTEC-Institucional instname:Consejo Nacional de Ciencia Tecnología e Innovación instacron:CONCYTEC |
| instname_str |
Consejo Nacional de Ciencia Tecnología e Innovación |
| instacron_str |
CONCYTEC |
| institution |
CONCYTEC |
| reponame_str |
CONCYTEC-Institucional |
| collection |
CONCYTEC-Institucional |
| repository.name.fl_str_mv |
Repositorio Institucional CONCYTEC |
| repository.mail.fl_str_mv |
repositorio@concytec.gob.pe |
| _version_ |
1844883059630931968 |
| spelling |
Publicationrp08412600rp08411600rp08410600rp06383600Prosopio-Galarza R.R.Adanaque-Infante L.A.Hernandez-Figueroa H.E.Rubio-Noriega R.E.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2021https://hdl.handle.net/20.500.12390/2969https://doi.org/10.1117/12.25783572-s2.0-85105941485The authors acknowledge funding support from CONCYTEC-FONDECYT within the call E041-01 [contract number 015-2018-FONDECYT/BM]. H.E.H. acknowledges funding support from the Brazilian Agency CNPq under Projects No 465757/2014-6 (INCT FOTONICOM) and No 312714/2019-2 (HEH’s Research Productivity Grant)Silicon modulators paved the way for silicon photonics to take control of optical interconnects. Since its popularization, most works use the 1-D diode model approximation to design the horizontal PN junction, which estimates the modulator bandwidth and efficiency. Some works do not even consider the effects of fringe capacitance, alleging that the junction's dimensions are large. The 1-D model is suitable for vertically uniform PN junctions. However, there are essential deviations for the typical rib waveguide used in most horizontal-junction silicon modulators. Our work aims to quantify such deviations incorporating details from 2D model simulations and offer a corrected 1-D model for estimating modulation bandwidth. This study was carried out as follows: Firstly, we incorporated an improved scheme for phase shifting and loss for different junction locations and widely used doping concentrations. Next, we analyzed the generation-recombination effects and their impact on the depletion width at the top and bottom of the waveguide. We calculated the depletion width via the 1-D model and the two-dimensional Poisson's equation finite-element calculation for the rib and identified an important mismatch. Lastly, we propose and demonstrate an accurate equivalent circuit with our 1-D model corrections. Our model considers the total depletion capacitance, the fringe capacitance, the capacitance due to the wider depletion widths at the top and bottom surfaces of the diode, and other capacitive effects at the border of the rib as a result of high reverse bias. We found that although the 1-D model is well-suited for small reverse biases, higher voltages and extreme junction locations affect the bandwidth's estimation dramatically. © 2021 SPIE.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengSPIEProceedings of SPIE - The International Society for Optical Engineeringinfo:eu-repo/semantics/openAccesssilicon photonicscarrier depletion-1electro-optics-1electro-optics-1optical modulators-1https://purl.org/pe-repo/ocde/ford#2.02.04-1An improved 1D diode model for the accurate modeling of parasitics in silicon modulatorsinfo:eu-repo/semantics/conferenceObjectreponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC20.500.12390/2969oai:repositorio.concytec.gob.pe:20.500.12390/29692024-05-30 16:12:38.61http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="1b061f4a-e479-4a53-b50d-7b562793e0af"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>An improved 1D diode model for the accurate modeling of parasitics in silicon modulators</Title> <PublishedIn> <Publication> <Title>Proceedings of SPIE - The International Society for Optical Engineering</Title> </Publication> </PublishedIn> <PublicationDate>2021</PublicationDate> <DOI>https://doi.org/10.1117/12.2578357</DOI> <SCP-Number>2-s2.0-85105941485</SCP-Number> <Authors> <Author> <DisplayName>Prosopio-Galarza R.R.</DisplayName> <Person id="rp08412" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Adanaque-Infante L.A.</DisplayName> <Person id="rp08411" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Hernandez-Figueroa H.E.</DisplayName> <Person id="rp08410" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Rubio-Noriega R.E.</DisplayName> <Person id="rp06383" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>SPIE</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>silicon photonics</Keyword> <Keyword>carrier depletion</Keyword> <Keyword>electro-optics</Keyword> <Keyword>electro-optics</Keyword> <Keyword>optical modulators</Keyword> <Abstract>Silicon modulators paved the way for silicon photonics to take control of optical interconnects. Since its popularization, most works use the 1-D diode model approximation to design the horizontal PN junction, which estimates the modulator bandwidth and efficiency. Some works do not even consider the effects of fringe capacitance, alleging that the junction's dimensions are large. The 1-D model is suitable for vertically uniform PN junctions. However, there are essential deviations for the typical rib waveguide used in most horizontal-junction silicon modulators. Our work aims to quantify such deviations incorporating details from 2D model simulations and offer a corrected 1-D model for estimating modulation bandwidth. This study was carried out as follows: Firstly, we incorporated an improved scheme for phase shifting and loss for different junction locations and widely used doping concentrations. Next, we analyzed the generation-recombination effects and their impact on the depletion width at the top and bottom of the waveguide. We calculated the depletion width via the 1-D model and the two-dimensional Poisson's equation finite-element calculation for the rib and identified an important mismatch. Lastly, we propose and demonstrate an accurate equivalent circuit with our 1-D model corrections. Our model considers the total depletion capacitance, the fringe capacitance, the capacitance due to the wider depletion widths at the top and bottom surfaces of the diode, and other capacitive effects at the border of the rib as a result of high reverse bias. We found that although the 1-D model is well-suited for small reverse biases, higher voltages and extreme junction locations affect the bandwidth's estimation dramatically. © 2021 SPIE.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1 |
| score |
13.243185 |
Nota importante:
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
