New technique for the implementation of nonlinear models for microwave transistors for broadband data communication

Descripción del Articulo

A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.
Detalles Bibliográficos
Autor: Rafael-Valdivia, Guillermo
Formato: artículo
Fecha de Publicación:2015
Institución:Universidad La Salle
Repositorio:ULASALLE-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.ulasalle.edu.pe:20.500.12953/38
Enlace del recurso:http://repositorio.ulasalle.edu.pe/handle/20.500.12953/38
Nivel de acceso:acceso restringido
Materia:Research Subject Categories::TECHNOLOGY
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dc.title.es_ES.fl_str_mv New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
title New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
spellingShingle New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Rafael-Valdivia, Guillermo
Research Subject Categories::TECHNOLOGY
Research Subject Categories::TECHNOLOGY
title_short New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
title_full New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
title_fullStr New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
title_full_unstemmed New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
title_sort New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
author Rafael-Valdivia, Guillermo
author_facet Rafael-Valdivia, Guillermo
author_role author
dc.contributor.author.fl_str_mv Rafael-Valdivia, Guillermo
dc.subject.es_ES.fl_str_mv Research Subject Categories::TECHNOLOGY
topic Research Subject Categories::TECHNOLOGY
Research Subject Categories::TECHNOLOGY
dc.subject.ocde.es_ES.fl_str_mv Research Subject Categories::TECHNOLOGY
description A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.
publishDate 2015
dc.date.accessioned.none.fl_str_mv 2018-11-21T20:52:56Z
dc.date.available.none.fl_str_mv 2018-11-21T20:52:56Z
dc.date.issued.fl_str_mv 2015-07-27
dc.type.es_ES.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.citation.es_ES.fl_str_mv @INPROCEEDINGS{7167010, author={G. Rafael-Valdivia and Zhiguo Su}, booktitle={2015 IEEE MTT-S International Microwave Symposium}, title={New technique for the implementation of nonlinear models for microwave transistors for broadband data communication}, year={2015}, volume={}, number={}, pages={1-3}, keywords={data communication;equivalent circuits;microwave transistors;nonlinear model;microwave transistor;broadband data communication;drain current function;equivalent circuit;frequency dispersion;Gallium nitride;HEMTs;Pulse measurements;Wideband;Circuit modeling;FETs;microwave devices;pulsed measurements;scattering parameters;memory effects}, doi={10.1109/MWSYM.2015.7167010}, ISSN={0149-645X}, month={May},}
dc.identifier.issn.none.fl_str_mv 0149-645X
dc.identifier.uri.none.fl_str_mv http://repositorio.ulasalle.edu.pe/handle/20.500.12953/38
dc.identifier.journal.es_ES.fl_str_mv IEEE MTT-S International Microwave Symposium
dc.identifier.doi.es_ES.fl_str_mv 10.1109/MWSYM.2015.7167010
identifier_str_mv @INPROCEEDINGS{7167010, author={G. Rafael-Valdivia and Zhiguo Su}, booktitle={2015 IEEE MTT-S International Microwave Symposium}, title={New technique for the implementation of nonlinear models for microwave transistors for broadband data communication}, year={2015}, volume={}, number={}, pages={1-3}, keywords={data communication;equivalent circuits;microwave transistors;nonlinear model;microwave transistor;broadband data communication;drain current function;equivalent circuit;frequency dispersion;Gallium nitride;HEMTs;Pulse measurements;Wideband;Circuit modeling;FETs;microwave devices;pulsed measurements;scattering parameters;memory effects}, doi={10.1109/MWSYM.2015.7167010}, ISSN={0149-645X}, month={May},}
0149-645X
IEEE MTT-S International Microwave Symposium
10.1109/MWSYM.2015.7167010
url http://repositorio.ulasalle.edu.pe/handle/20.500.12953/38
dc.language.iso.eng_US.fl_str_mv eng
language eng
dc.relation.es_ES.fl_str_mv info:eu-repo/semantics/article
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dc.format.es_ES.fl_str_mv application/msword
dc.publisher.es_ES.fl_str_mv Universidad La Salle
dc.source.es_ES.fl_str_mv Universidad La Salle
Repositorio institucional - ULASALLE
dc.source.none.fl_str_mv reponame:ULASALLE-Institucional
instname:Universidad La Salle
instacron:ULASALLE
instname_str Universidad La Salle
instacron_str ULASALLE
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spelling Rafael-Valdivia, Guillermo2018-11-21T20:52:56Z2018-11-21T20:52:56Z2015-07-27@INPROCEEDINGS{7167010, author={G. Rafael-Valdivia and Zhiguo Su}, booktitle={2015 IEEE MTT-S International Microwave Symposium}, title={New technique for the implementation of nonlinear models for microwave transistors for broadband data communication}, year={2015}, volume={}, number={}, pages={1-3}, keywords={data communication;equivalent circuits;microwave transistors;nonlinear model;microwave transistor;broadband data communication;drain current function;equivalent circuit;frequency dispersion;Gallium nitride;HEMTs;Pulse measurements;Wideband;Circuit modeling;FETs;microwave devices;pulsed measurements;scattering parameters;memory effects}, doi={10.1109/MWSYM.2015.7167010}, ISSN={0149-645X}, month={May},}0149-645Xhttp://repositorio.ulasalle.edu.pe/handle/20.500.12953/38IEEE MTT-S International Microwave Symposium10.1109/MWSYM.2015.7167010A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.Trabajo de investigaciónDoble ciegoapplication/mswordengUniversidad La Salleinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/restrictedAccessUniversidad La SalleRepositorio institucional - ULASALLEreponame:ULASALLE-Institucionalinstname:Universidad La Salleinstacron:ULASALLEResearch Subject Categories::TECHNOLOGYResearch Subject Categories::TECHNOLOGYNew technique for the implementation of nonlinear models for microwave transistors for broadband data communicationinfo:eu-repo/semantics/articleORIGINALlink_articulo.txtlink_articulo.txttext/plain45http://repositorio.ulasalle.edu.pe/bitstream/20.500.12953/38/1/link_articulo.txt4c25a349139f8c0d10a6a47990165aa5MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ulasalle.edu.pe/bitstream/20.500.12953/38/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52TEXTlink_articulo.txt.txtlink_articulo.txt.txtExtracted texttext/plain45http://repositorio.ulasalle.edu.pe/bitstream/20.500.12953/38/3/link_articulo.txt.txtf3dfd4ff53cdfc075156b6256fd09cd8MD5320.500.12953/38oai:repositorio.ulasalle.edu.pe:20.500.12953/382021-06-11 14:39:34.272Repositorio Institucional de la Universidad La Sallerepositorio@ulasalle.edu.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New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
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