Non-linear modeling for low and high power microwave transistors

Descripción del Articulo

New generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.
Detalles Bibliográficos
Autor: Rafael Valdivia, Guillermo
Formato: artículo
Fecha de Publicación:2017
Institución:Universidad La Salle
Repositorio:ULASALLE-Institucional
Lenguaje:inglés
OAI Identifier:oai:repositorio.ulasalle.edu.pe:20.500.12953/65
Enlace del recurso:http://repositorio.ulasalle.edu.pe/handle/20.500.12953/65
Nivel de acceso:acceso restringido
Materia:Mathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating
Microwave circuits, Microwave transistors
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dc.title.es_ES.fl_str_mv Non-linear modeling for low and high power microwave transistors
title Non-linear modeling for low and high power microwave transistors
spellingShingle Non-linear modeling for low and high power microwave transistors
Rafael Valdivia, Guillermo
Mathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating
Microwave circuits, Microwave transistors
title_short Non-linear modeling for low and high power microwave transistors
title_full Non-linear modeling for low and high power microwave transistors
title_fullStr Non-linear modeling for low and high power microwave transistors
title_full_unstemmed Non-linear modeling for low and high power microwave transistors
title_sort Non-linear modeling for low and high power microwave transistors
author Rafael Valdivia, Guillermo
author_facet Rafael Valdivia, Guillermo
author_role author
dc.contributor.advisor.fl_str_mv Su, Zhiguo
dc.contributor.author.fl_str_mv Rafael Valdivia, Guillermo
dc.subject.es_ES.fl_str_mv Mathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating
topic Mathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating
Microwave circuits, Microwave transistors
dc.subject.ocde.es_ES.fl_str_mv Microwave circuits, Microwave transistors
description New generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.
publishDate 2017
dc.date.accessioned.none.fl_str_mv 2019-04-02T21:20:52Z
dc.date.available.none.fl_str_mv 2019-04-02T21:20:52Z
dc.date.issued.fl_str_mv 2017-01-19
dc.type.es_ES.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.citation.es_ES.fl_str_mv G. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247
dc.identifier.uri.none.fl_str_mv http://repositorio.ulasalle.edu.pe/handle/20.500.12953/65
dc.identifier.journal.es_ES.fl_str_mv IEEE Xplore digital Library
dc.identifier.doi.es_ES.fl_str_mv 10.1109/EuMC.2016.7824476
identifier_str_mv G. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247
IEEE Xplore digital Library
10.1109/EuMC.2016.7824476
url http://repositorio.ulasalle.edu.pe/handle/20.500.12953/65
dc.language.iso.eng_US.fl_str_mv eng
language eng
dc.relation.es_ES.fl_str_mv info:eu-repo/semantics/article
dc.relation.uri.es_ES.fl_str_mv https://ieeexplore.ieee.org/document/7824476/authors#authors
dc.rights.es_ES.fl_str_mv info:eu-repo/semantics/restrictedAccess
dc.rights.uri.es_ES.fl_str_mv https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv restrictedAccess
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dc.publisher.es_ES.fl_str_mv IEEE Xplore Digital Library
dc.source.es_ES.fl_str_mv Repositorio Institucional - ULASALLE
dc.source.none.fl_str_mv reponame:ULASALLE-Institucional
instname:Universidad La Salle
instacron:ULASALLE
instname_str Universidad La Salle
instacron_str ULASALLE
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spelling Su, ZhiguoRafael Valdivia, Guillermo2019-04-02T21:20:52Z2019-04-02T21:20:52Z2017-01-19G. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247http://repositorio.ulasalle.edu.pe/handle/20.500.12953/65IEEE Xplore digital Library10.1109/EuMC.2016.7824476New generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.Doble- Ciegoapplication/mswordengIEEE Xplore Digital Libraryinfo:eu-repo/semantics/articlehttps://ieeexplore.ieee.org/document/7824476/authors#authorsinfo:eu-repo/semantics/restrictedAccesshttps://creativecommons.org/licenses/by-nc-nd/4.0/Repositorio Institucional - ULASALLEreponame:ULASALLE-Institucionalinstname:Universidad La Salleinstacron:ULASALLEMathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heatingMicrowave circuits, Microwave transistorsNon-linear modeling for low and high power microwave transistorsinfo:eu-repo/semantics/articleORIGINALNon-linear.docxNon-linear.docx"Artículo principal"application/vnd.openxmlformats-officedocument.wordprocessingml.document13082http://repositorio.ulasalle.edu.pe/bitstream/20.500.12953/65/1/Non-linear.docx5021907772e0bbaedc20cb189a4596ddMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ulasalle.edu.pe/bitstream/20.500.12953/65/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD5220.500.12953/65oai:repositorio.ulasalle.edu.pe:20.500.12953/652021-06-11 14:39:34.412Repositorio Institucional de la Universidad La Sallerepositorio@ulasalle.edu.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Non-linear modeling for low and high power microwave transistors
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