Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices

• Autor: Montañez Huamán, Liz Margarita
• Formato: tesis de maestría
• Fecha de Publicación: 2016
• Institución: Pontificia Universidad Católica del Perú
• Repositorio: PUCP-Institucional
• Lenguaje: español
• OAI Identifier: oai:repositorio.pucp.edu.pe:20.500.14657/146167
• Enlace del recurso: http://hdl.handle.net/20.500.12404/6999
• Nivel de acceso: acceso abierto
• Materia: Luminiscencia--Dispositivos; Luz--Estequiometría; Espectrometría; Fotoluminiscencia; https://purl.org/pe-repo/ocde/ford#2.05.01

In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spectra exhibit the formation of oxygen bonded elements and X-ray photoelectron spectroscopy reveals the formation of aluminum oxynitride and silicon oxycarbide as host matrices. The thin films were annealed at temperatures ranging from 300 °C to 1000 °C using a rapid thermal processing furnace. The highest light emission intensity for the case of aluminum oxynitride was obtained for terbium concentrations higher than 1 at% and for the annealing temperature at around 400 °C. Additionally, using the characterized films as active layer first electroluminescence devices were designed and investigated.