Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering
Descripción del Articulo
L.M.S. thanks to the International Max Planck Research School Dynamical processes in atoms, molecules and solids and the Deutscher Akademischer Austauschdienst(DAAD) for the financial support. G.C.S. and C.V.L. are grateful to National Council of Science and Technology (CONCYTEC) from Peru for the f...
| Autores: | , , , , , |
|---|---|
| Formato: | artículo |
| Fecha de Publicación: | 2017 |
| Institución: | Consejo Nacional de Ciencia Tecnología e Innovación |
| Repositorio: | CONCYTEC-Institucional |
| Lenguaje: | inglés |
| OAI Identifier: | oai:repositorio.concytec.gob.pe:20.500.12390/591 |
| Enlace del recurso: | https://hdl.handle.net/20.500.12390/591 https://doi.org/10.1016/j.carbon.2017.09.025 |
| Nivel de acceso: | acceso abierto |
| Materia: | Transportation routes Deposition Graphene Interfaces (materials) Molecular dynamics Nanoribbons Silica Silicon Silicon carbide Substrates Transport properties Interface thermal resistance Non equilibrium molecular dynamic (NEMD) Rectification factors Structural asymmetry Substrate engineering Substrate temperature Thermal transport Thermal transport properties Heterojunctions https://purl.org/pe-repo/ocde/ford#2.07.00 |
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| dc.title.none.fl_str_mv |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| title |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| spellingShingle |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering Medrano Sandonas L. Transportation routes Deposition Graphene Interfaces (materials) Molecular dynamics Nanoribbons Silica Silicon Silicon carbide Substrates Transport properties Interface thermal resistance Non equilibrium molecular dynamic (NEMD) Rectification factors Structural asymmetry Substrate engineering Substrate temperature Thermal transport Thermal transport properties Heterojunctions https://purl.org/pe-repo/ocde/ford#2.07.00 |
| title_short |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| title_full |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| title_fullStr |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| title_full_unstemmed |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| title_sort |
Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering |
| author |
Medrano Sandonas L. |
| author_facet |
Medrano Sandonas L. Cuba-Supanta G. Gutierrez R. Dianat A. Landauro C.V. Cuniberti G. |
| author_role |
author |
| author2 |
Cuba-Supanta G. Gutierrez R. Dianat A. Landauro C.V. Cuniberti G. |
| author2_role |
author author author author author |
| dc.contributor.author.fl_str_mv |
Medrano Sandonas L. Cuba-Supanta G. Gutierrez R. Dianat A. Landauro C.V. Cuniberti G. |
| dc.subject.none.fl_str_mv |
Transportation routes |
| topic |
Transportation routes Deposition Graphene Interfaces (materials) Molecular dynamics Nanoribbons Silica Silicon Silicon carbide Substrates Transport properties Interface thermal resistance Non equilibrium molecular dynamic (NEMD) Rectification factors Structural asymmetry Substrate engineering Substrate temperature Thermal transport Thermal transport properties Heterojunctions https://purl.org/pe-repo/ocde/ford#2.07.00 |
| dc.subject.es_PE.fl_str_mv |
Deposition Graphene Interfaces (materials) Molecular dynamics Nanoribbons Silica Silicon Silicon carbide Substrates Transport properties Interface thermal resistance Non equilibrium molecular dynamic (NEMD) Rectification factors Structural asymmetry Substrate engineering Substrate temperature Thermal transport Thermal transport properties Heterojunctions |
| dc.subject.ocde.none.fl_str_mv |
https://purl.org/pe-repo/ocde/ford#2.07.00 |
| description |
L.M.S. thanks to the International Max Planck Research School Dynamical processes in atoms, molecules and solids and the Deutscher Akademischer Austauschdienst(DAAD) for the financial support. G.C.S. and C.V.L. are grateful to National Council of Science and Technology (CONCYTEC) from Peru for the financial support through the Doctoral Program for Peruvian Universities (Nº 218-2014-CONCYTEC) and the Peruvian Excellence Center Program, respectively. This work has also been partly supported by the German Research Foundation(DFG) within the Cluster of Excellence “Center for Advancing Electronics Dresden”. We acknowledge the Center for Information Services and High Performance Computing (ZIH) at TU Dresden for computational resources. |
| publishDate |
2017 |
| dc.date.accessioned.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.available.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.issued.fl_str_mv |
2017 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/20.500.12390/591 |
| dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1016/j.carbon.2017.09.025 |
| dc.identifier.scopus.none.fl_str_mv |
2-s2.0-85029426712 |
| url |
https://hdl.handle.net/20.500.12390/591 https://doi.org/10.1016/j.carbon.2017.09.025 |
| identifier_str_mv |
2-s2.0-85029426712 |
| dc.language.iso.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartof.none.fl_str_mv |
Carbon |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
Elsevier Ltd |
| publisher.none.fl_str_mv |
Elsevier Ltd |
| dc.source.none.fl_str_mv |
reponame:CONCYTEC-Institucional instname:Consejo Nacional de Ciencia Tecnología e Innovación instacron:CONCYTEC |
| instname_str |
Consejo Nacional de Ciencia Tecnología e Innovación |
| instacron_str |
CONCYTEC |
| institution |
CONCYTEC |
| reponame_str |
CONCYTEC-Institucional |
| collection |
CONCYTEC-Institucional |
| repository.name.fl_str_mv |
Repositorio Institucional CONCYTEC |
| repository.mail.fl_str_mv |
repositorio@concytec.gob.pe |
| _version_ |
1844883070383030272 |
| spelling |
Publicationrp01164600rp00836500rp00595500rp01162600rp00840500rp01163600Medrano Sandonas L.Cuba-Supanta G.Gutierrez R.Dianat A.Landauro C.V.Cuniberti G.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2017https://hdl.handle.net/20.500.12390/591https://doi.org/10.1016/j.carbon.2017.09.0252-s2.0-85029426712L.M.S. thanks to the International Max Planck Research School Dynamical processes in atoms, molecules and solids and the Deutscher Akademischer Austauschdienst(DAAD) for the financial support. G.C.S. and C.V.L. are grateful to National Council of Science and Technology (CONCYTEC) from Peru for the financial support through the Doctoral Program for Peruvian Universities (Nº 218-2014-CONCYTEC) and the Peruvian Excellence Center Program, respectively. This work has also been partly supported by the German Research Foundation(DFG) within the Cluster of Excellence “Center for Advancing Electronics Dresden”. We acknowledge the Center for Information Services and High Performance Computing (ZIH) at TU Dresden for computational resources.Two-dimensional heterostructures offer a new route to manipulate phonons at the nanoscale. By performing non-equilibrium molecular dynamics simulations we address the thermal transport properties of structurally asymmetric graphene/hBN nanoribbon heterojunctions deposited on several substrates: graphite, Si(100), SiC(0001), and SiO2. Our results show a reduction of the interface thermal resistance in coplanar G/hBN heterojunctions upon substrate deposition which is mainly related to the increment on the power spectrum overlap. This effect is more pronounced for deposition on Si(100) and SiO2 substrates, independently of the planar stacking order of the materials. Moreover, it has been found that the thermal rectification factor increases as a function of the degree of structural asymmetry for hBN-G nanoribbons, reaching values up to 24%, while it displays a minimum () for G-hBN nanoribbons. More importantly, these properties can also be tuned by varying the substrate temperature, e.g., thermal rectification of symmetric hBN-G nanoribbon is enhanced from 8.8% to 79% by reducing the temperature of Si(100) substrate. Our investigation yields new insights into the physical mechanisms governing heat transport in G/hBN heterojunctions, and thus opens potential new routes to the design of phononic devices.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengElsevier LtdCarboninfo:eu-repo/semantics/openAccessTransportation routesDeposition-1Graphene-1Interfaces (materials)-1Molecular dynamics-1Nanoribbons-1Silica-1Silicon-1Silicon carbide-1Substrates-1Transport properties-1Interface thermal resistance-1Non equilibrium molecular dynamic (NEMD)-1Rectification factors-1Structural asymmetry-1Substrate engineering-1Substrate temperature-1Thermal transport-1Thermal transport properties-1Heterojunctions-1https://purl.org/pe-repo/ocde/ford#2.07.00-1Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineeringinfo:eu-repo/semantics/articlereponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#20.500.12390/591oai:repositorio.concytec.gob.pe:20.500.12390/5912024-05-30 15:22:19.503http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="2c4e46a4-5947-4c81-8db3-affb200413c9"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Enhancement of thermal transport properties of asymmetric Graphene/hBN nanoribbon heterojunctions by substrate engineering</Title> <PublishedIn> <Publication> <Title>Carbon</Title> </Publication> </PublishedIn> <PublicationDate>2017</PublicationDate> <DOI>https://doi.org/10.1016/j.carbon.2017.09.025</DOI> <SCP-Number>2-s2.0-85029426712</SCP-Number> <Authors> <Author> <DisplayName>Medrano Sandonas L.</DisplayName> <Person id="rp01164" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Cuba-Supanta G.</DisplayName> <Person id="rp00836" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Gutierrez R.</DisplayName> <Person id="rp00595" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Dianat A.</DisplayName> <Person id="rp01162" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Landauro C.V.</DisplayName> <Person id="rp00840" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Cuniberti G.</DisplayName> <Person id="rp01163" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Elsevier Ltd</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>Transportation routes</Keyword> <Keyword>Deposition</Keyword> <Keyword>Graphene</Keyword> <Keyword>Interfaces (materials)</Keyword> <Keyword>Molecular dynamics</Keyword> <Keyword>Nanoribbons</Keyword> <Keyword>Silica</Keyword> <Keyword>Silicon</Keyword> <Keyword>Silicon carbide</Keyword> <Keyword>Substrates</Keyword> <Keyword>Transport properties</Keyword> <Keyword>Interface thermal resistance</Keyword> <Keyword>Non equilibrium molecular dynamic (NEMD)</Keyword> <Keyword>Rectification factors</Keyword> <Keyword>Structural asymmetry</Keyword> <Keyword>Substrate engineering</Keyword> <Keyword>Substrate temperature</Keyword> <Keyword>Thermal transport</Keyword> <Keyword>Thermal transport properties</Keyword> <Keyword>Heterojunctions</Keyword> <Abstract>Two-dimensional heterostructures offer a new route to manipulate phonons at the nanoscale. By performing non-equilibrium molecular dynamics simulations we address the thermal transport properties of structurally asymmetric graphene/hBN nanoribbon heterojunctions deposited on several substrates: graphite, Si(100), SiC(0001), and SiO2. Our results show a reduction of the interface thermal resistance in coplanar G/hBN heterojunctions upon substrate deposition which is mainly related to the increment on the power spectrum overlap. This effect is more pronounced for deposition on Si(100) and SiO2 substrates, independently of the planar stacking order of the materials. Moreover, it has been found that the thermal rectification factor increases as a function of the degree of structural asymmetry for hBN-G nanoribbons, reaching values up to 24%, while it displays a minimum () for G-hBN nanoribbons. More importantly, these properties can also be tuned by varying the substrate temperature, e.g., thermal rectification of symmetric hBN-G nanoribbon is enhanced from 8.8% to 79% by reducing the temperature of Si(100) substrate. Our investigation yields new insights into the physical mechanisms governing heat transport in G/hBN heterojunctions, and thus opens potential new routes to the design of phononic devices.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1 |
| score |
13.457506 |
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La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).