Thin films of molybdenum nitride were deposited on silicon wafers (111) by means of the DC reactive magnetic sputtering technique, at the substrate temperature of 100, 200, 300 and 400 °C, in the gas mixture (Ar+N2 ) at the working pressure of 4,3x-3 torr. The composition of the films has been defined with Auger Electron Spectroscopy (AES). X-ray diffraction shows that such films have a preferential crystallographic orientation along the plane (112) and the grain size increases from 8,21 to 13,16 nm in the range of 100 to 400 °C the substrate temperature. The resistivity of the films decreases with increasing substrate temperature from 74,20 to 2,45 μΩ.cm showing ohmic characteristics. The lowest value of the electrical resistivity was 2,45 μΩ.cm at the substrate temperature of 400 °C.