In copper oxide superconductor materials the internal charge transference between the superconducting planes of CuO2 and the charge reservoir blocks, it is a key factor that controls the superconducting critical temperature. The superconducting planes of CuO2 are not planes in a strict sense, the position of the Cu(2) atom and the O(2) and O(3) oxygen atoms are not lying in a same plane, the change of its positions are closely related to atomic replacements in the superconducting planes of CuO2 or in the charge reservoir blocks. Therefore, we correlates the substitutions effects in the canonical unit cell of YBa2Cu3O7 with regard to length and angle bond variation of copper and oxygen atoms with the superconducting critical temperature obtained by Rietveld refinement of X-ray diffraction patterns in polycrystalline powder samples, such as: SmBa2Cu3O7, [Y0,90,Pr0,10]Ba2Cu3O7, [Ca,La]Ba2Cu...

In the copper oxide superconductor materials the internal charge transference between the superconducting planes of CuO2 and the charge reservoir blocks, it is a key factor that control the superconducting critical temperature. The superconducting planes of CuO2 are not planes in a strict sense, the position of the Cu(2) atom and the O(2), O(3) oxygen atoms are not lying in a same plane, the change of its positions are closely related to atomic replacements in the superconducting planes of CuO2 or in the charge reservoir blocks. Therefore, we correlates the substitutions effects in the canonical unit cell of YBa2Cu3O7 with regard to length and angle bond variation of copper and oxygen atoms with the superconducting critical temperature obtained by Rietveld refinement of x-ray diffraction patterns in polycrystalline powder samples, such as: SmBa2Cu3O7, [Y0.90,Pr0.10]Ba2Cu3O7, [Ca,La]Ba2Cu...

The graphene, since 2004, had show some exceptional mechanical, thermal and electronic properties in se- veral configurations such as optical modulators, transistors, gas detectors, electrocromic devices, electrodes, thermal dissipaters and integrated circuits. There is an inconvenient in the atom by atom manipulation for obtain the specific properties for each function in each proposed device. We account between them, the disorder in the graphene structure and the intercalation of impurities in the hexagonal structure and the imperfections of the substrate that incorporate ripples in the graphene structure. Nevertheless, these do not modify the cones of the valence and conduction bands. The Dirac point remains. Other options has been suggested to induce a gap between the K and K′ symmetry points where lay the Dirac points in which converge the two charge carrier cones, electrons and h...