On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach

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In thepresent work, we study the optical properties of semiconductors near the fundamental absorption taking into account disorder induced tail states. In particular, we pay special attention to GAAs and lead halide perovskites. We address existing models for the description of the absorption spectr...

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Detalles Bibliográficos
Autor: Lizárraga Olivares, Kevin Angello
Formato: tesis doctoral
Fecha de Publicación:2023
Institución:Pontificia Universidad Católica del Perú
Repositorio:PUCP-Tesis
Lenguaje:inglés
OAI Identifier:oai:tesis.pucp.edu.pe:20.500.12404/25793
Enlace del recurso:http://hdl.handle.net/20.500.12404/25793
Nivel de acceso:acceso abierto
Materia:Semiconductores--Propiedades ópticas
Semiconductores--Propiedades térmicas
Arseniuro de Galio
Absorción
https://purl.org/pe-repo/ocde/ford#1.03.00
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dc.title.es_ES.fl_str_mv On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
title On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
spellingShingle On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
Lizárraga Olivares, Kevin Angello
Semiconductores--Propiedades ópticas
Semiconductores--Propiedades térmicas
Arseniuro de Galio
Absorción
https://purl.org/pe-repo/ocde/ford#1.03.00
title_short On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
title_full On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
title_fullStr On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
title_full_unstemmed On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
title_sort On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach
author Lizárraga Olivares, Kevin Angello
author_facet Lizárraga Olivares, Kevin Angello
author_role author
dc.contributor.advisor.fl_str_mv Guerra Torres, Jorge Andrés
dc.contributor.author.fl_str_mv Lizárraga Olivares, Kevin Angello
dc.subject.es_ES.fl_str_mv Semiconductores--Propiedades ópticas
Semiconductores--Propiedades térmicas
Arseniuro de Galio
Absorción
topic Semiconductores--Propiedades ópticas
Semiconductores--Propiedades térmicas
Arseniuro de Galio
Absorción
https://purl.org/pe-repo/ocde/ford#1.03.00
dc.subject.ocde.none.fl_str_mv https://purl.org/pe-repo/ocde/ford#1.03.00
description In thepresent work, we study the optical properties of semiconductors near the fundamental absorption taking into account disorder induced tail states. In particular, we pay special attention to GAAs and lead halide perovskites. We address existing models for the description of the absorption spectra, and extend them in the band fluctuations framework. We start with traditional semiconductors where we have developed our models inspired in Jellison-Modine procedure (Tauc-Lorentz model).These models are tested on direct,indirect and amorphous band gap materials such as the ones of the group III −V family. Later, we continue the discussion with the inclusion of the Sommerfeld enhancement factor for understanding the nature of excitonic semiconductors. Here, the Elliott model is modified through the band fluctuations procedure in order to obtain an analytic expression for the imaginary part of the electrical permittivity. This new model accurately describes the band gap and binding energy of systems like GaAs,MAPbBr3, MAPbI3 and MAPbI3−xClx. Furthermore,the impact of the sample temperature on optical parameters such as the band gap can provide information regarding the thermal expansion and th eelectron-phon on interaction in the solid. In particular,if the material exhibits a high electron-phon on coupling,like in the cases of the polar semiconductors, the model describing the exciton can no longer rely on the Hydrogen-like picture, but instead it must be computed with a theory considering exciton-polarons. In the latter case, the exciton is dressed by a cloudofphonons that lower its binding energy. Remarkably, our model for excitonic materials correctly predicts the exciton-polaron binding energies of lead halide perovskites andt heir carrier’s effective massees. Lastly, we emphasize the powerful relation between the optical properties and the thermal properties. Notably, we found a good agreement among our predicted expressions,using the Debye’s model, with other specific heat experimental results.
publishDate 2023
dc.date.accessioned.none.fl_str_mv 2023-08-28T17:49:52Z
dc.date.available.none.fl_str_mv 2023-08-28T17:49:52Z
dc.date.created.none.fl_str_mv 2023
dc.date.issued.fl_str_mv 2023-08-28
dc.type.es_ES.fl_str_mv info:eu-repo/semantics/doctoralThesis
format doctoralThesis
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/20.500.12404/25793
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dc.language.iso.none.fl_str_mv eng
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spelling Guerra Torres, Jorge AndrésLizárraga Olivares, Kevin Angello2023-08-28T17:49:52Z2023-08-28T17:49:52Z20232023-08-28http://hdl.handle.net/20.500.12404/25793In thepresent work, we study the optical properties of semiconductors near the fundamental absorption taking into account disorder induced tail states. In particular, we pay special attention to GAAs and lead halide perovskites. We address existing models for the description of the absorption spectra, and extend them in the band fluctuations framework. We start with traditional semiconductors where we have developed our models inspired in Jellison-Modine procedure (Tauc-Lorentz model).These models are tested on direct,indirect and amorphous band gap materials such as the ones of the group III −V family. Later, we continue the discussion with the inclusion of the Sommerfeld enhancement factor for understanding the nature of excitonic semiconductors. Here, the Elliott model is modified through the band fluctuations procedure in order to obtain an analytic expression for the imaginary part of the electrical permittivity. This new model accurately describes the band gap and binding energy of systems like GaAs,MAPbBr3, MAPbI3 and MAPbI3−xClx. Furthermore,the impact of the sample temperature on optical parameters such as the band gap can provide information regarding the thermal expansion and th eelectron-phon on interaction in the solid. In particular,if the material exhibits a high electron-phon on coupling,like in the cases of the polar semiconductors, the model describing the exciton can no longer rely on the Hydrogen-like picture, but instead it must be computed with a theory considering exciton-polarons. In the latter case, the exciton is dressed by a cloudofphonons that lower its binding energy. 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