ABSTRACT Thin films based on tantalum Ta and tantalum nitride TaN, are known for their excellent properties such as mechanical hardness, corrosion resistance and are used in a wide range of industrial, medicinal and hard materials coating applications. The objective of the present work was to determine if there is influence of the annealing temperature of thin films of TaN synthesized by magnetron sputtering with direct current on the structure and roughness. The films of Ta and TaN were deposited on silicon wafers (111) by the reactive magnetic sputtering technique with a direct current source, using a tantalum target, a mixture of argon and nitrogen gases and the films were synthesized at the temperature of 300 °C for a time of 10 minutes. Then the films were annealed in the range of 500 °C to 800 °C in a high vacuum oven in an Argon atmosphere every 100 °C for the time of 1 hour. ...