Thin lms of molybdenum (Mo) and Molybdenum Nitride (Mo2N) have properties such_x000D_ as high melting point, high conductivity, good chemical stability and high hardness. Due to_x000D_ their remarkable properties they are of great use in microelectronics, and solar cells. The objective of the study was to determine the e ect of the synthesis temperature on the crystalline structure and the roughness of the thin lms of molybdenum nitride. The Molybdenum and Molybdenum Nitride lms were deposited on silicon substrates of preferential direction (111) type n by means of the direct current reactive magnetron sputtering. For which a pre vacuum was made and then high vacuum, the Argon gas was added, a DC voltage was applied and then the Nitrogen gas with certain pressure parameters, the target was high purity molybdenum and lms were obtained at di erent temperatures during the time of 10 minutes...