Influencia de la temperatura de recocido sobre las propiedades ópticas, estructurales y morfológicas de la película delgada de ZNO dopada con CU obtenida por rociado pirolítico

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In this thesis work I´ve studied the influence of annealing temperature over to rugosity, transmitance and cristallite size of ZnO:Cu 3 % thin films. The ZnO:Cu 3% thin films was synthetisized over glass substrates by spray pyrolisys technique using zinc acetate dyhidrate[(32)2.22] and copper chlori...

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Detalles Bibliográficos
Autor: Castro Campos, Eberth Isaac
Formato: tesis de grado
Fecha de Publicación:2018
Institución:Universidad Nacional de Trujillo
Repositorio:UNITRU-Tesis
Lenguaje:español
OAI Identifier:oai:dspace.unitru.edu.pe:20.500.14414/11333
Enlace del recurso:https://hdl.handle.net/20.500.14414/11333
Nivel de acceso:acceso abierto
Materia:Película delgada
Temperatura de recocido
Policristalina
Descripción
Sumario:In this thesis work I´ve studied the influence of annealing temperature over to rugosity, transmitance and cristallite size of ZnO:Cu 3 % thin films. The ZnO:Cu 3% thin films was synthetisized over glass substrates by spray pyrolisys technique using zinc acetate dyhidrate[(32)2.22] and copper chloride dyhidrate[2.22] as precursor solutions mixed in ethanol. The diffraction patterns of ZnO:Cu 3% thin films both without annealing and annealed at 400, 450 and 500 ℃ indicates that all samples are polycrystalline with wurtzita hexagonal structure. The preferred plane of growth was (002), decreasing the intensity of its peak only in the sample annealed at 400 ℃. The crystallite size for the sample without annealing was 25.82 nm and for the samples annealed at 400, 450 and 500 ℃ of 18.78, 26.33 and 29.23 nm respectively. The images obtained by atomic force microscopy indicate that the average roughness (Ra) increases with annealing temperature except for the sample annealed at 400 ℃ which decreases. Analyzes in the UV-Vis indicate that these films have high transmittance greater than 80% and that the absorbance is minimal. The band gap for sample without annealing was 3.256 eV and for the samples annealed at 400, 450 and 500 ℃ of 3.256, 3.263 and 3.257 eV respectively
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