Study of structural and electronic properties of GaSb:V

Descripción del Articulo

Gallium antimonide binary semiconductor has had many applications in optoelectronic devices in recent years. The study of their defects in semiconductor materials is of vital interest for this type of application. But, in addition to the routine characterization of the undoped semiconductor, it is n...

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Detalles Bibliográficos
Autores: Yaringaño, Roxani, Sonco, Rodolfo
Formato: artículo
Fecha de Publicación:2021
Institución:Universidad Nacional Mayor de San Marcos
Repositorio:Revistas - Universidad Nacional Mayor de San Marcos
Lenguaje:español
OAI Identifier:oai:ojs.csi.unmsm:article/21418
Enlace del recurso:https://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/21418
Nivel de acceso:acceso abierto
Materia:GaSb:V
Atomic Force Microscope
Electronic Properties
III-V Semiconductors
Microscopio de Fuerza Atómica
Propiedades Electrónicas
Semiconductores III-V
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spelling Study of structural and electronic properties of GaSb:VEstudio de propiedades estructurales y electrónicas de GaSb:VYaringaño, RoxaniSonco, RodolfoYaringaño, RoxaniSonco, RodolfoGaSb:VAtomic Force MicroscopeElectronic PropertiesIII-V SemiconductorsGaSb:VMicroscopio de Fuerza AtómicaPropiedades ElectrónicasSemiconductores III-VGallium antimonide binary semiconductor has had many applications in optoelectronic devices in recent years. The study of their defects in semiconductor materials is of vital interest for this type of application. But, in addition to the routine characterization of the undoped semiconductor, it is necessary to characterize the effects produced by electrically active impurities in the doped samples. In this work, the structural and electronic properties of the vanadium doped gallium antimonide binary semiconductor (GaSb: V) were studied by means of an Atomic Force Microscope. The scan of its surface was carried out in the tapping mode to obtain images of the topography and topographic profiles of the sample, while the electronic properties were determined through the I vs V curves obtained by the contact mode.El semiconductor binario antimoniuro de galio ha tenido muchas aplicaciones en dispositivos optoelectrónicos en los últimos años. El estudio de sus defectos en los materiales semiconductores es de vital interés para este tipo de aplicaciones. Pero, además de la caracterización rutinaria del semiconductor sin dopar, es necesario la caracterización de los efectos que producen las impurezas eléctricamente activas en las muestras dopadas. En este trabajo se estudiaron las propiedades estructurales y electrónicas del semiconductor binario antimoniuro de galio dopado con vanadio (GaSb:V) por medio de un Microscopio de Fuerza Atómica. El barrido de su superficie se realizó en el modo tapping para obtener imágenes de la topografía y de los perfiles topográficos de la muestra, mientras las propiedades electrónicas se determinaron a través de las curvas I vs V conseguidas mediante el modo contacto.Universidad Nacional Mayor de San Marcos2021-12-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/2141810.15381/rif.v24i3.21418Revista de Investigación de Física; Vol. 24 No. 3 (2021); 31-38Revista de Investigación de Física; Vol. 24 Núm. 3 (2021); 31-381728-29771605-7724reponame:Revistas - Universidad Nacional Mayor de San Marcosinstname:Universidad Nacional Mayor de San Marcosinstacron:UNMSMspahttps://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/21418/17319Derechos de autor 2021 Roxani Yaringaño, Rodolfo Soncohttp://creativecommons.org/licenses/by/4.0info:eu-repo/semantics/openAccessoai:ojs.csi.unmsm:article/214182021-12-30T13:38:53Z
dc.title.none.fl_str_mv Study of structural and electronic properties of GaSb:V
Estudio de propiedades estructurales y electrónicas de GaSb:V
title Study of structural and electronic properties of GaSb:V
spellingShingle Study of structural and electronic properties of GaSb:V
Yaringaño, Roxani
GaSb:V
Atomic Force Microscope
Electronic Properties
III-V Semiconductors
GaSb:V
Microscopio de Fuerza Atómica
Propiedades Electrónicas
Semiconductores III-V
title_short Study of structural and electronic properties of GaSb:V
title_full Study of structural and electronic properties of GaSb:V
title_fullStr Study of structural and electronic properties of GaSb:V
title_full_unstemmed Study of structural and electronic properties of GaSb:V
title_sort Study of structural and electronic properties of GaSb:V
dc.creator.none.fl_str_mv Yaringaño, Roxani
Sonco, Rodolfo
Yaringaño, Roxani
Sonco, Rodolfo
author Yaringaño, Roxani
author_facet Yaringaño, Roxani
Sonco, Rodolfo
author_role author
author2 Sonco, Rodolfo
author2_role author
dc.subject.none.fl_str_mv GaSb:V
Atomic Force Microscope
Electronic Properties
III-V Semiconductors
GaSb:V
Microscopio de Fuerza Atómica
Propiedades Electrónicas
Semiconductores III-V
topic GaSb:V
Atomic Force Microscope
Electronic Properties
III-V Semiconductors
GaSb:V
Microscopio de Fuerza Atómica
Propiedades Electrónicas
Semiconductores III-V
description Gallium antimonide binary semiconductor has had many applications in optoelectronic devices in recent years. The study of their defects in semiconductor materials is of vital interest for this type of application. But, in addition to the routine characterization of the undoped semiconductor, it is necessary to characterize the effects produced by electrically active impurities in the doped samples. In this work, the structural and electronic properties of the vanadium doped gallium antimonide binary semiconductor (GaSb: V) were studied by means of an Atomic Force Microscope. The scan of its surface was carried out in the tapping mode to obtain images of the topography and topographic profiles of the sample, while the electronic properties were determined through the I vs V curves obtained by the contact mode.
publishDate 2021
dc.date.none.fl_str_mv 2021-12-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/21418
10.15381/rif.v24i3.21418
url https://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/21418
identifier_str_mv 10.15381/rif.v24i3.21418
dc.language.none.fl_str_mv spa
language spa
dc.relation.none.fl_str_mv https://revistasinvestigacion.unmsm.edu.pe/index.php/fisica/article/view/21418/17319
dc.rights.none.fl_str_mv Derechos de autor 2021 Roxani Yaringaño, Rodolfo Sonco
http://creativecommons.org/licenses/by/4.0
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Derechos de autor 2021 Roxani Yaringaño, Rodolfo Sonco
http://creativecommons.org/licenses/by/4.0
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Universidad Nacional Mayor de San Marcos
publisher.none.fl_str_mv Universidad Nacional Mayor de San Marcos
dc.source.none.fl_str_mv Revista de Investigación de Física; Vol. 24 No. 3 (2021); 31-38
Revista de Investigación de Física; Vol. 24 Núm. 3 (2021); 31-38
1728-2977
1605-7724
reponame:Revistas - Universidad Nacional Mayor de San Marcos
instname:Universidad Nacional Mayor de San Marcos
instacron:UNMSM
instname_str Universidad Nacional Mayor de San Marcos
instacron_str UNMSM
institution UNMSM
reponame_str Revistas - Universidad Nacional Mayor de San Marcos
collection Revistas - Universidad Nacional Mayor de San Marcos
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 13.949868
Study of structural and electronic properties of GaSb:V
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