Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices
Descripción del Articulo
In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spectr...
| Autor: | |
|---|---|
| Formato: | tesis de maestría |
| Fecha de Publicación: | 2016 |
| Institución: | Pontificia Universidad Católica del Perú |
| Repositorio: | PUCP-Tesis |
| Lenguaje: | español |
| OAI Identifier: | oai:tesis.pucp.edu.pe:20.500.12404/6999 |
| Enlace del recurso: | http://hdl.handle.net/20.500.12404/6999 |
| Nivel de acceso: | acceso abierto |
| Materia: | Luminiscencia--Dispositivos Luz--Estequiometría Espectrometría Fotoluminiscencia https://purl.org/pe-repo/ocde/ford#2.05.01 |
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| dc.title.es_ES.fl_str_mv |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| title |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| spellingShingle |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices Montañez Huamán, Liz Margarita Luminiscencia--Dispositivos Luz--Estequiometría Espectrometría Fotoluminiscencia https://purl.org/pe-repo/ocde/ford#2.05.01 |
| title_short |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| title_full |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| title_fullStr |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| title_full_unstemmed |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| title_sort |
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices |
| author |
Montañez Huamán, Liz Margarita |
| author_facet |
Montañez Huamán, Liz Margarita |
| author_role |
author |
| dc.contributor.advisor.fl_str_mv |
Weingärtner, Roland Hoppe, Harald |
| dc.contributor.author.fl_str_mv |
Montañez Huamán, Liz Margarita |
| dc.subject.es_ES.fl_str_mv |
Luminiscencia--Dispositivos Luz--Estequiometría Espectrometría Fotoluminiscencia |
| topic |
Luminiscencia--Dispositivos Luz--Estequiometría Espectrometría Fotoluminiscencia https://purl.org/pe-repo/ocde/ford#2.05.01 |
| dc.subject.ocde.es_ES.fl_str_mv |
https://purl.org/pe-repo/ocde/ford#2.05.01 |
| description |
In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spectra exhibit the formation of oxygen bonded elements and X-ray photoelectron spectroscopy reveals the formation of aluminum oxynitride and silicon oxycarbide as host matrices. The thin films were annealed at temperatures ranging from 300 °C to 1000 °C using a rapid thermal processing furnace. The highest light emission intensity for the case of aluminum oxynitride was obtained for terbium concentrations higher than 1 at% and for the annealing temperature at around 400 °C. Additionally, using the characterized films as active layer first electroluminescence devices were designed and investigated. |
| publishDate |
2016 |
| dc.date.accessioned.es_ES.fl_str_mv |
2016-06-21T03:04:44Z |
| dc.date.available.es_ES.fl_str_mv |
2016-06-21T03:04:44Z |
| dc.date.created.es_ES.fl_str_mv |
2016 |
| dc.date.issued.fl_str_mv |
2016-06-20 |
| dc.type.es_ES.fl_str_mv |
info:eu-repo/semantics/masterThesis |
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masterThesis |
| dc.identifier.uri.none.fl_str_mv |
http://hdl.handle.net/20.500.12404/6999 |
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http://hdl.handle.net/20.500.12404/6999 |
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spa |
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spa |
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SUNEDU |
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info:eu-repo/semantics/openAccess |
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http://creativecommons.org/licenses/by-nc-nd/2.5/pe/ |
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openAccess |
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http://creativecommons.org/licenses/by-nc-nd/2.5/pe/ |
| dc.publisher.es_ES.fl_str_mv |
Pontificia Universidad Católica del Perú |
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PE |
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Weingärtner, RolandHoppe, HaraldMontañez Huamán, Liz Margarita2016-06-21T03:04:44Z2016-06-21T03:04:44Z20162016-06-20http://hdl.handle.net/20.500.12404/6999In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spectra exhibit the formation of oxygen bonded elements and X-ray photoelectron spectroscopy reveals the formation of aluminum oxynitride and silicon oxycarbide as host matrices. The thin films were annealed at temperatures ranging from 300 °C to 1000 °C using a rapid thermal processing furnace. The highest light emission intensity for the case of aluminum oxynitride was obtained for terbium concentrations higher than 1 at% and for the annealing temperature at around 400 °C. Additionally, using the characterized films as active layer first electroluminescence devices were designed and investigated.En el presente trabajo de investigación se ha estudiado propiedades estequiometrias, estructurales y de emisión de luz de semiconductor de amplio ancho de banda dopados con terbio. La difracción de rayos-X en ángulo rasante confirma el estado amorfo de las películas. Los espectros de absorción infrarroja muestran la formación de óxidos en las películas y la espectroscopia de foto-electrones de rayos-X revela la formación de oxinitruro de aluminio y oxicarburo de silicio. Las películas han sido calentadas a temperaturas en el rango de 300 °C a 1000 °C en un horno de rápido procesamiento térmico. De acuerdo con el análisis de las medidas de fotoluminiscencia, la intensidad más alta de emisión de luz del terbio es para películas que tengan concentraciones de terbio mayores al 1at% y a una temperatura de tratamiento térmico de alrededor de 400 °C. Adicionalmente, las películas analizadas han sido usado como capas activas para el diseño de dispositivos electroluminiscentesFondo Nacional de Desarrollo Científico y Tecnológico - FondecytTesisspaPontificia Universidad Católica del PerúPEinfo:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/2.5/pe/Luminiscencia--DispositivosLuz--EstequiometríaEspectrometríaFotoluminiscenciahttps://purl.org/pe-repo/ocde/ford#2.05.01Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devicesinfo:eu-repo/semantics/masterThesisreponame:PUCP-Tesisinstname:Pontificia Universidad Católica del Perúinstacron:PUCPSUNEDUMaestro en Ingeniería y Ciencia de los MaterialesMaestríaPontificia Universidad Católica del Perú. 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La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
