Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide
Descripción del Articulo
This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the sc...
| Autores: | , , , , , , |
|---|---|
| Formato: | artículo |
| Fecha de Publicación: | 2016 |
| Institución: | Consejo Nacional de Ciencia Tecnología e Innovación |
| Repositorio: | CONCYTEC-Institucional |
| Lenguaje: | inglés |
| OAI Identifier: | oai:repositorio.concytec.gob.pe:20.500.12390/644 |
| Enlace del recurso: | https://hdl.handle.net/20.500.12390/644 https://doi.org/10.1557/adv.2016.422 |
| Nivel de acceso: | acceso abierto |
| Materia: | Thin films Absorption spectroscopy Amorphous films Amorphous materials Energy gap Hydrogenation Optical properties Silicon Silicon carbide Band gap energy Band gap engineering Deposition process General equations Hydrogen dilution Hydrogenated silicon carbide Post deposition annealing Simple modeling Amorphous silicon https://purl.org/pe-repo/ocde/ford#2.04.01 |
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CONCYTEC-Institucional |
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4689 |
| dc.title.none.fl_str_mv |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| title |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| spellingShingle |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide Guerra J.A. Thin films Absorption spectroscopy Amorphous films Amorphous materials Energy gap Hydrogenation Optical properties Silicon Silicon Silicon carbide Band gap energy Band gap engineering Deposition process General equations Hydrogen dilution Hydrogenated silicon carbide Post deposition annealing Simple modeling Amorphous silicon https://purl.org/pe-repo/ocde/ford#2.04.01 |
| title_short |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| title_full |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| title_fullStr |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| title_full_unstemmed |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| title_sort |
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide |
| author |
Guerra J.A. |
| author_facet |
Guerra J.A. Montañez L.M. Tucto K. Angulo J. Töfflinger J.A. Winnaker A. Weingärtner R. |
| author_role |
author |
| author2 |
Montañez L.M. Tucto K. Angulo J. Töfflinger J.A. Winnaker A. Weingärtner R. |
| author2_role |
author author author author author author |
| dc.contributor.author.fl_str_mv |
Guerra J.A. Montañez L.M. Tucto K. Angulo J. Töfflinger J.A. Winnaker A. Weingärtner R. |
| dc.subject.none.fl_str_mv |
Thin films |
| topic |
Thin films Absorption spectroscopy Amorphous films Amorphous materials Energy gap Hydrogenation Optical properties Silicon Silicon Silicon carbide Band gap energy Band gap engineering Deposition process General equations Hydrogen dilution Hydrogenated silicon carbide Post deposition annealing Simple modeling Amorphous silicon https://purl.org/pe-repo/ocde/ford#2.04.01 |
| dc.subject.es_PE.fl_str_mv |
Absorption spectroscopy Amorphous films Amorphous materials Energy gap Hydrogenation Optical properties Silicon Silicon Silicon carbide Band gap energy Band gap engineering Deposition process General equations Hydrogen dilution Hydrogenated silicon carbide Post deposition annealing Simple modeling Amorphous silicon |
| dc.subject.ocde.none.fl_str_mv |
https://purl.org/pe-repo/ocde/ford#2.04.01 |
| description |
This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements. |
| publishDate |
2016 |
| dc.date.accessioned.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.available.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.issued.fl_str_mv |
2016 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/20.500.12390/644 |
| dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1557/adv.2016.422 |
| dc.identifier.scopus.none.fl_str_mv |
2-s2.0-85018286606 |
| url |
https://hdl.handle.net/20.500.12390/644 https://doi.org/10.1557/adv.2016.422 |
| identifier_str_mv |
2-s2.0-85018286606 |
| dc.language.iso.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartof.none.fl_str_mv |
MRS Advances |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
Materials Research Society |
| publisher.none.fl_str_mv |
Materials Research Society |
| dc.source.none.fl_str_mv |
reponame:CONCYTEC-Institucional instname:Consejo Nacional de Ciencia Tecnología e Innovación instacron:CONCYTEC |
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Consejo Nacional de Ciencia Tecnología e Innovación |
| instacron_str |
CONCYTEC |
| institution |
CONCYTEC |
| reponame_str |
CONCYTEC-Institucional |
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CONCYTEC-Institucional |
| repository.name.fl_str_mv |
Repositorio Institucional CONCYTEC |
| repository.mail.fl_str_mv |
repositorio@concytec.gob.pe |
| _version_ |
1844883011050405888 |
| spelling |
Publicationrp00710500rp00708500rp00713500rp01353600rp00712500rp00709500rp00714500Guerra J.A.Montañez L.M.Tucto K.Angulo J.Töfflinger J.A.Winnaker A.Weingärtner R.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2016https://hdl.handle.net/20.500.12390/644https://doi.org/10.1557/adv.2016.4222-s2.0-85018286606This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements.A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengMaterials Research SocietyMRS Advancesinfo:eu-repo/semantics/openAccessThin filmsAbsorption spectroscopy-1Amorphous films-1Amorphous materials-1Energy gap-1Hydrogenation-1Optical properties-1Silicon-1Silicon-1Silicon carbide-1Band gap energy-1Band gap engineering-1Deposition process-1General equations-1Hydrogen dilution-1Hydrogenated silicon carbide-1Post deposition annealing-1Simple modeling-1Amorphous silicon-1https://purl.org/pe-repo/ocde/ford#2.04.01-1Bandgap Engineering of Amorphous Hydrogenated Silicon Carbideinfo:eu-repo/semantics/articlereponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#20.500.12390/644oai:repositorio.concytec.gob.pe:20.500.12390/6442024-05-30 15:35:54.185http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="a480a2da-2f66-421a-8586-6c8ed0362112"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide</Title> <PublishedIn> <Publication> <Title>MRS Advances</Title> </Publication> </PublishedIn> <PublicationDate>2016</PublicationDate> <DOI>https://doi.org/10.1557/adv.2016.422</DOI> <SCP-Number>2-s2.0-85018286606</SCP-Number> <Authors> <Author> <DisplayName>Guerra J.A.</DisplayName> <Person id="rp00710" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Montañez L.M.</DisplayName> <Person id="rp00708" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Tucto K.</DisplayName> <Person id="rp00713" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Angulo J.</DisplayName> <Person id="rp01353" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Töfflinger J.A.</DisplayName> <Person id="rp00712" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Winnaker A.</DisplayName> <Person id="rp00709" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingärtner R.</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Materials Research Society</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>Thin films</Keyword> <Keyword>Absorption spectroscopy</Keyword> <Keyword>Amorphous films</Keyword> <Keyword>Amorphous materials</Keyword> <Keyword>Energy gap</Keyword> <Keyword>Hydrogenation</Keyword> <Keyword>Optical properties</Keyword> <Keyword>Silicon</Keyword> <Keyword>Silicon</Keyword> <Keyword>Silicon carbide</Keyword> <Keyword>Band gap energy</Keyword> <Keyword>Band gap engineering</Keyword> <Keyword>Deposition process</Keyword> <Keyword>General equations</Keyword> <Keyword>Hydrogen dilution</Keyword> <Keyword>Hydrogenated silicon carbide</Keyword> <Keyword>Post deposition annealing</Keyword> <Keyword>Simple modeling</Keyword> <Keyword>Amorphous silicon</Keyword> <Abstract>A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1 |
| score |
13.325717 |
Nota importante:
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
