Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering
Descripción del Articulo
Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures s...
| Autores: | , , , , , , , , |
|---|---|
| Formato: | artículo |
| Fecha de Publicación: | 2017 |
| Institución: | Consejo Nacional de Ciencia Tecnología e Innovación |
| Repositorio: | CONCYTEC-Institucional |
| Lenguaje: | inglés |
| OAI Identifier: | oai:repositorio.concytec.gob.pe:20.500.12390/2789 |
| Enlace del recurso: | https://hdl.handle.net/20.500.12390/2789 https://doi.org/10.4028/www.scientific.net/MSF.890.299 |
| Nivel de acceso: | acceso abierto |
| Materia: | Wide bandgap semiconductor Aluminum nitride Cathodoluminescence Photoluminescence excitation Rare earths Terbium http://purl.org/pe-repo/ocde/ford#2.04.01 |
| id |
CONC_48aa88fed3123921aac460f697cc65d2 |
|---|---|
| oai_identifier_str |
oai:repositorio.concytec.gob.pe:20.500.12390/2789 |
| network_acronym_str |
CONC |
| network_name_str |
CONCYTEC-Institucional |
| repository_id_str |
4689 |
| dc.title.none.fl_str_mv |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| title |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| spellingShingle |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering Tucto Salinas K.Y. Wide bandgap semiconductor Aluminum nitride Cathodoluminescence Photoluminescence excitation Rare earths Terbium http://purl.org/pe-repo/ocde/ford#2.04.01 |
| title_short |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| title_full |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| title_fullStr |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| title_full_unstemmed |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| title_sort |
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering |
| author |
Tucto Salinas K.Y. |
| author_facet |
Tucto Salinas K.Y. Flores Escalante L.F. Guerra Torres J.A. Grieseler R. Kups T. Pezoldt J. Osvet A. Batentschuk M. Weingärtner R. |
| author_role |
author |
| author2 |
Flores Escalante L.F. Guerra Torres J.A. Grieseler R. Kups T. Pezoldt J. Osvet A. Batentschuk M. Weingärtner R. |
| author2_role |
author author author author author author author author |
| dc.contributor.author.fl_str_mv |
Tucto Salinas K.Y. Flores Escalante L.F. Guerra Torres J.A. Grieseler R. Kups T. Pezoldt J. Osvet A. Batentschuk M. Weingärtner R. |
| dc.subject.none.fl_str_mv |
Wide bandgap semiconductor |
| topic |
Wide bandgap semiconductor Aluminum nitride Cathodoluminescence Photoluminescence excitation Rare earths Terbium http://purl.org/pe-repo/ocde/ford#2.04.01 |
| dc.subject.es_PE.fl_str_mv |
Aluminum nitride Cathodoluminescence Photoluminescence excitation Rare earths Terbium |
| dc.subject.ocde.none.fl_str_mv |
http://purl.org/pe-repo/ocde/ford#2.04.01 |
| description |
Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission. © 2017 Trans Tech Publications, Switzerland. |
| publishDate |
2017 |
| dc.date.accessioned.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.available.none.fl_str_mv |
2024-05-30T23:13:38Z |
| dc.date.issued.fl_str_mv |
2017 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/20.500.12390/2789 |
| dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.4028/www.scientific.net/MSF.890.299 |
| dc.identifier.scopus.none.fl_str_mv |
2-s2.0-85016419055 |
| url |
https://hdl.handle.net/20.500.12390/2789 https://doi.org/10.4028/www.scientific.net/MSF.890.299 |
| identifier_str_mv |
2-s2.0-85016419055 |
| dc.language.iso.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartof.none.fl_str_mv |
Materials Science Forum |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
| publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
| dc.source.none.fl_str_mv |
reponame:CONCYTEC-Institucional instname:Consejo Nacional de Ciencia Tecnología e Innovación instacron:CONCYTEC |
| instname_str |
Consejo Nacional de Ciencia Tecnología e Innovación |
| instacron_str |
CONCYTEC |
| institution |
CONCYTEC |
| reponame_str |
CONCYTEC-Institucional |
| collection |
CONCYTEC-Institucional |
| repository.name.fl_str_mv |
Repositorio Institucional CONCYTEC |
| repository.mail.fl_str_mv |
repositorio@concytec.gob.pe |
| _version_ |
1844883054273757184 |
| spelling |
Publicationrp01105600rp01108600rp01109600rp01106600rp01102600rp01104600rp01107600rp01103600rp00714600Tucto Salinas K.Y.Flores Escalante L.F.Guerra Torres J.A.Grieseler R.Kups T.Pezoldt J.Osvet A.Batentschuk M.Weingärtner R.2024-05-30T23:13:38Z2024-05-30T23:13:38Z2017https://hdl.handle.net/20.500.12390/2789https://doi.org/10.4028/www.scientific.net/MSF.890.2992-s2.0-85016419055Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission. © 2017 Trans Tech Publications, Switzerland.Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - ConcytecengTrans Tech Publications LtdMaterials Science Foruminfo:eu-repo/semantics/openAccessWide bandgap semiconductorAluminum nitride-1Cathodoluminescence-1Photoluminescence excitation-1Rare earths-1Terbium-1http://purl.org/pe-repo/ocde/ford#2.04.01-1Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputteringinfo:eu-repo/semantics/articlereponame:CONCYTEC-Institucionalinstname:Consejo Nacional de Ciencia Tecnología e Innovacióninstacron:CONCYTEC20.500.12390/2789oai:repositorio.concytec.gob.pe:20.500.12390/27892024-05-30 16:11:23.661http://purl.org/coar/access_right/c_14cbinfo:eu-repo/semantics/closedAccessmetadata only accesshttps://repositorio.concytec.gob.peRepositorio Institucional CONCYTECrepositorio@concytec.gob.pe#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="0d782970-b338-444a-9769-916919c27cce"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering</Title> <PublishedIn> <Publication> <Title>Materials Science Forum</Title> </Publication> </PublishedIn> <PublicationDate>2017</PublicationDate> <DOI>https://doi.org/10.4028/www.scientific.net/MSF.890.299</DOI> <SCP-Number>2-s2.0-85016419055</SCP-Number> <Authors> <Author> <DisplayName>Tucto Salinas K.Y.</DisplayName> <Person id="rp01105" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Flores Escalante L.F.</DisplayName> <Person id="rp01108" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Guerra Torres J.A.</DisplayName> <Person id="rp01109" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Grieseler R.</DisplayName> <Person id="rp01106" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Kups T.</DisplayName> <Person id="rp01102" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Pezoldt J.</DisplayName> <Person id="rp01104" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Osvet A.</DisplayName> <Person id="rp01107" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Batentschuk M.</DisplayName> <Person id="rp01103" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> <Author> <DisplayName>Weingärtner R.</DisplayName> <Person id="rp00714" /> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Trans Tech Publications Ltd</DisplayName> <OrgUnit /> </Publisher> </Publishers> <Keyword>Wide bandgap semiconductor</Keyword> <Keyword>Aluminum nitride</Keyword> <Keyword>Cathodoluminescence</Keyword> <Keyword>Photoluminescence excitation</Keyword> <Keyword>Rare earths</Keyword> <Keyword>Terbium</Keyword> <Abstract>Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission. © 2017 Trans Tech Publications, Switzerland.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication> -1 |
| score |
13.0672035 |
Nota importante:
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
La información contenida en este registro es de entera responsabilidad de la institución que gestiona el repositorio institucional donde esta contenido este documento o set de datos. El CONCYTEC no se hace responsable por los contenidos (publicaciones y/o datos) accesibles a través del Repositorio Nacional Digital de Ciencia, Tecnología e Innovación de Acceso Abierto (ALICIA).
